Cooling device of polycrystalline ingot furnace for supersized silicon ingot

A super-sized cooling device technology, applied in the direction of polycrystalline material growth, crystal growth, single crystal growth, etc., can solve the problems of long crystal growth time and affecting the crystal growth effect, and achieve faster cooling speed, enhanced protection, and cooling capacity strong effect

Pending Publication Date: 2017-08-18
连云港清友新能源科技有限公司
View PDF6 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] With the continuous expansion of silicon ingot specifications, the self-cooling of the furnace body will affect the crystal growth effect, and the crystal growth time will be rel

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Cooling device of polycrystalline ingot furnace for supersized silicon ingot
  • Cooling device of polycrystalline ingot furnace for supersized silicon ingot

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0016] The specific technical solutions of the present invention will be further described below with reference to the accompanying drawings, so that those skilled in the art can further understand the present invention, without restricting their rights.

[0017] Reference figure 1 with figure 2 , A cooling device for a polycrystalline ingot furnace for super-large silicon ingots, comprising a cooling plate 2 arranged in the lower furnace body of the polycrystalline ingot furnace, and the cooling plate 2 is fixed in the lower furnace body through a support frame, The cooling plate 2 is a molybdenum plate or a copper plate with a square shape and a thickness of 30mm. A temperature measurement sampling hole is provided at the center of the cooling radiating plate 2, and cooling pipes 5 are spread on the lower surface of the cooling radiating plate 2. The cooling pipes 5 are spirally arranged on the cooling plate 2 in a circular shape, and the cooling pipes 5 are provided with One...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a cooling device of a polycrystalline ingot furnace for a supersized silicon ingot. The cooling device comprises a cooling radiation plate arranged in a lower furnace body of the polycrystalline ingot furnace, wherein a temperature measurement sampling hole is formed in the center of the cooling radiation plate; a cooling pipeline which is provided with an inlet and an outlet is paved on the lower surface of the cooling radiation plate; a protection plate I connected with the lower furnace body is arranged on the periphery of the lower surface of the cooling radiation plate; a protection plate II is arranged on the periphery of the temperature measurement sampling hole in the upper surface of the cooling radiation plate. According to the cooling device, the cooling radiation plate is arranged in the lower furnace body of the polycrystalline ingot furnace, the cooling pipeline is arranged on the lower surface of the cooling radiation plate, and liquid or inert gas with high cooling capability is introduced into the cooling pipeline for cooling, so that the cooling speed is increased; the protection plates I and II are arranged to prevent feed liquid from flowing out of the periphery of the temperature measurement sampling hole or the cooling radiation plate after a crucible is broken, so that protection is reinforced, and the safety is improved.

Description

technical field [0001] The invention relates to the technical field of polysilicon production equipment, in particular to a cooling device for a polysilicon ingot furnace used for super-sized silicon ingots. Background technique [0002] The solar photovoltaic industry is developing rapidly, and the market scale continues to grow, but at the same time, the market competition is fierce. In order to achieve parity on the Internet as soon as possible and achieve wider popularization and application, all aspects of the industry strive to pursue and obtain high-efficiency and low-cost batteries. In the upstream crystal silicon link, it is very important to obtain high-quality, low-cost crystals. At present, large-size (G6) polycrystalline silicon ingots have become the mainstream of the industry, and the next generation of super-large-sized silicon ingots G7 or G8 has become the only way to continue the current trend. Ingot weight, increase productivity, reduce unit consumption, ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C30B28/06C30B29/06
CPCC30B28/06C30B29/06
Inventor 不公告发明人
Owner 连云港清友新能源科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap