Cooling device of polycrystalline ingot furnace for supersized silicon ingot

Abstract

The invention discloses a cooling device of a polycrystalline ingot furnace for a supersized silicon ingot. The cooling device comprises a cooling radiation plate arranged in a lower furnace body of the polycrystalline ingot furnace, wherein a temperature measurement sampling hole is formed in the center of the cooling radiation plate; a cooling pipeline which is provided with an inlet and an outlet is paved on the lower surface of the cooling radiation plate; a protection plate I connected with the lower furnace body is arranged on the periphery of the lower surface of the cooling radiation plate; a protection plate II is arranged on the periphery of the temperature measurement sampling hole in the upper surface of the cooling radiation plate. According to the cooling device, the cooling radiation plate is arranged in the lower furnace body of the polycrystalline ingot furnace, the cooling pipeline is arranged on the lower surface of the cooling radiation plate, and liquid or inert gas with high cooling capability is introduced into the cooling pipeline for cooling, so that the cooling speed is increased; the protection plates I and II are arranged to prevent feed liquid from flowing out of the periphery of the temperature measurement sampling hole or the cooling radiation plate after a crucible is broken, so that protection is reinforced, and the safety is improved.

Description

technical field [0001] The invention relates to the technical field of polysilicon production equipment, in particular to a cooling device for a polysilicon ingot furnace used for super-sized silicon ingots. Background technique [0002] The solar photovoltaic industry is developing rapidly, and the market scale continues to grow, but at the same time, the market competition is fierce. In order to achieve parity on the Internet as soon as possible and achieve wider popularization and application, all aspects of the industry strive to pursue and obtain high-efficiency and low-cost batteries. In the upstream crystal silicon link, it is very important to obtain high-quality, low-cost crystals. At present, large-size (G6) polycrystalline silicon ingots have become the mainstream of the industry, and the next generation of super-large-sized silicon ingots G7 or G8 has become the only way to continue the current trend. Ingot weight, increase productivity, reduce unit consumption, ...

AI Technical Summary

Problems solved by technology

[0004] With the continuous expansion of silicon ingot specifications, the self-cooling of the furnace body will affect the crystal growth effect, and the crystal growth time will be relatively long. Therefore, in order to solve the above technical problems, it is necessary to provide a new type of ingot furnace cooling device. To overcome the defects in the prior art

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