Low-power-consumption, high-precision and non-bandgap reference voltage source

A reference voltage source and reference voltage technology, which is applied in the direction of adjusting electrical variables, control/regulation systems, instruments, etc., to achieve the effects of simple structure, flexible use, and excellent performance

Inactive Publication Date: 2017-08-18
CHANGSHA JEMO IC DESIGN CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The problem to be solved by the present invention is: Aiming at the above-mentioned drawbacks of conventional bandgap reference voltage sources in the application of deep submicron CMOS technology, a low-power high-precision non-bandgap reference voltage source is proposed. The main features of the present invention in:

Method used

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  • Low-power-consumption, high-precision and non-bandgap reference voltage source
  • Low-power-consumption, high-precision and non-bandgap reference voltage source

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Embodiment Construction

[0014] The present invention will be described in further detail below in conjunction with the accompanying drawings.

[0015] A low power consumption high precision non-bandgap reference voltage source proposed by the present invention has a block diagram of its circuit structure as shown in figure 1 Shown, including start-up circuit, bias current generation circuit, reference voltage generation circuit. The starting circuit, the bias current generating circuit, and the reference voltage generating circuit are respectively connected to the power supply voltage VDD. The starting circuit is used for the circuit deadlock problem that may occur during the power-on process of the circuit, and its output terminal is connected to the input terminal of the bias current generating circuit. The bias current generation circuit is used to generate a reference current that does not change with the power supply voltage. The output terminal of the bias current generation circuit is mirrored...

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Abstract

The invention discloses a high-threshold tube threshold voltage minus a negative-threshold tube threshold voltage to realize a temperature-independent low-power, high-precision, non-bandgap reference voltage source. The reference voltage source consists of three circuits: a start-up circuit, a bias current generation circuit and a reference voltage generation circuit. The start-up circuit provides the start-up voltage for the bias current generating circuit after it is connected to the DC power supply, the bias current generating circuit provides the necessary current for the reference voltage generating circuit, and the reference voltage generating circuit passes the threshold voltage of a high threshold tube and a negative The threshold voltage of the threshold tube is different, and after being corrected by the reference voltage control code, a temperature-independent reference voltage source is generated. The invention is fully compatible with common CMOS technology, and has the characteristics of high precision, low power consumption, flexibility and reliability.

Description

technical field [0001] The invention is used in the field of integrated circuit design, and in particular relates to a low-power-consumption high-precision non-bandgap reference voltage source. Background technique [0002] In recent years, with the widespread development and application of various portable electronic products, such as mobile phones, digital cameras, mobile audio / video equipment, etc., how to reduce power consumption and prolong battery life has become one of the primary considerations in product design. Therefore, as one of the key modules in analog integrated circuits, the reference voltage source has higher and higher requirements for its low voltage, low power consumption, accuracy and stability. [0003] The bandgap reference is widely used in the industry because of its high accuracy. Its working principle is that the forward voltage of the pn junction has a negative temperature coefficient, and the bases of two bipolar transistors operating at differe...

Claims

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Application Information

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IPC IPC(8): G05F3/26
CPCG05F3/262
Inventor 王志鹏
Owner CHANGSHA JEMO IC DESIGN CO LTD
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