Method and device for the laser-based working of two-dimensional, crystalline substrates, in particular semiconductor substrates
A laser processing and semiconductor technology, applied in laser welding equipment, metal processing equipment, semiconductor devices, etc., can solve problems such as separation
Active Publication Date: 2017-08-18
INNOLAS SOLUTIONS
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Problems solved by technology
[0005] The last-mentioned method has the disadvantage that the induced crack formation occurs at a point of a certain depth or at the surface, so that the entire thickness of the material is separated only via additional, mechanical and / or thermally induced crack extension
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[0060] figure 1 and figure 2 The basic steps of the processing method according to the invention are shown. A laser beam 2a emitted by a laser 3 (not shown) is irradiated onto an optical arrangement 6 (for the optical arrangement 6 only a plano-convex collimating mirror 11 is shown on figure 1 c (see also the description in the subsequent Figures 4 to 6 In the embodiment), the plano-convex collimating mirror 11 focuses the beam bundle of the laser beam 2a onto the substrate 1).
[0061] figure 1 a shows (in plan view on the substrate plane or in the x-y plane perpendicular to the direction of incident radiation z) the subsequently described elements 8, 7 and 13 utilizing an optical arrangement according to the invention without What happens in the case of inventing the necessary beam formation: From the irradiated laser beam 2a, only an expanded laser beam is produced on the beam output side over a defined expanded area along the beam direction (length direction 1 or ...
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Abstract
The present invention relates to a method for the laser-based working of a two-dimensional, crystalline substrate in order to separate the substrate into a number of parts, in which the laser beam (2a, 2f) of a laser (3) for working the substrate (1) is directed onto the latter, in which an optical arrangement (6) positioned in the path of rays of the laser (3) is used to form from the laser beam (2a) radiated onto the optical arrangement (6), on the side on which the beam emerges from it, a laser beam focal area (2f) with an extent both along the direction of the beam (z) and in just one first direction (y) transverse to the direction of the beam (z) but not with an extent in a second direction (x) that is perpendicular both to the first direction (y) and to the direction of the beam (z), wherein the substrate (1) is positioned in relation to the laser beam focal area (2f) in such a way that the laser beam focal area (2f) produces an induced absorption inside the substrate (1) along an extended portion of the area (2c) of the substrate material, as a result of which induced cracks are formed in the substrate material along this extended portion of the area (2c).
Description
technical field [0001] The invention relates to a method for laser-based machining of a planar crystal substrate for separating the substrate into parts, to a corresponding device, and to such a method or the use of such a device. It is therefore an object in particular to divide a planar substrate in the form of a semiconductor wafer into multiple parts (separated from the wafer). Thus, the process is generally performed with a pulsed laser at a wavelength at which the material of the substrate is substantially transparent. Background technique [0002] Devices and methods for separating such materials by means of lasers are already known in the prior art. [0003] According to DE 10 2011 000 768 A1, it is possible to use laser light, which is largely absorbed by the material by virtue of its wavelength or its light intensity, or after a first interaction (e.g. heating by charge carrier generation; induced absorption), so that the material Being highly absorbable, the mat...
Claims
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Patent Timeline
Login to View More IPC IPC(8): B23K26/53B23K26/064B23K26/073B23K26/0622
CPCB23K26/0622B23K26/53B23K26/0648B23K26/0652B23K26/0732B23K2101/40B23K26/066
Inventor 里格·博梅丹尼尔·韦伯
Owner INNOLAS SOLUTIONS