Check patentability & draft patents in minutes with Patsnap Eureka AI!

Method of measuring asymmetry, inspection apparatus, lithographic system and device manufacturing method

An asymmetric, inspection equipment technology, used in opto-mechanical equipment, microlithography exposure equipment, patterned surface photoengraving process, etc.

Active Publication Date: 2017-08-29
ASML NETHERLANDS BV
View PDF19 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, obtaining optimal asymmetry measurements across a wide range of wavelengths remains a great challenge for hardware designers, manufacturers and operators of these instruments

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method of measuring asymmetry, inspection apparatus, lithographic system and device manufacturing method
  • Method of measuring asymmetry, inspection apparatus, lithographic system and device manufacturing method
  • Method of measuring asymmetry, inspection apparatus, lithographic system and device manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0049] Before describing embodiments of the invention in detail, it is instructive to present an example environment in which embodiments of the invention may be practiced.

[0050] figure 1 A lithographic apparatus LA is schematically depicted. The apparatus comprises: an illumination system (illuminator) IL configured to condition a radiation beam B (e.g. UV radiation or DUV radiation); a patterning device support or support structure (e.g. a mask table) MT configured To support the patterning device (e.g., mask) MA, and connected to a first positioner PM configured to accurately position the patterning device according to certain parameters; two substrate tables (e.g., wafer stage) WTa and WTb, each configured to hold a substrate (e.g., a resist-coated wafer) W, and each connected to a second positioner PW configured to accurately position the substrate according to certain parameters; and a projection system ( For example, a refractive projection lens system) PS configu...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A scatterometer is used in a dark-field imaging mode to measure asymmetry-related parameters such overlay. Measurements of small grating targets are made using identical optical paths, with the target in two orientations to obtain separate measurements of +1 and -1 diffraction orders. In this way, intensity scaling differences (tool asymmetry) are avoided. However, additive Intensity defects due to stray light (ghosts) in the optical system cannot be avoided. Additive intensity issues strongly depend on the ratio between 0th and 1st order diffraction and are therefore strongly wafer (process) dependent opposite. Calibration measurements (CM1-CM4) are made on a few representative target gratings having biases (+d,-d). The calibration measurements are made, using not only different wafer rotation (RZ=0, Pai) but also complementary apertures (13N, 13S). Corrections (Delta, G) are calculated and applied calculate corrected asymmetry A', to reduce error caused by stray light.

Description

[0001] Cross References to Related Applications [0002] This application claims priority to EP application 14199200.8, filed 19 December 2014, which is hereby incorporated by reference in its entirety. technical field [0003] The present invention relates to methods and apparatus for metrology that can be used to fabricate devices, eg by lithography, and to methods of fabricating devices using lithography. Background technique [0004] A lithographic apparatus is a machine that applies a desired pattern to a substrate, usually to a target portion of the substrate. A lithographic apparatus may be used, for example, in the manufacture of integrated circuits (ICs). In this case, a patterning device (which is alternatively referred to as a mask or reticle) may be used to generate the circuit pattern to be formed on the individual layers of the IC. The pattern can be transferred onto a target portion (eg, comprising a portion of a die, a die, or a plurality of dies) on a sub...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G03F7/20
CPCG03F7/70633G03F7/70941G06T7/11G06T7/0004G06T2207/30148
Inventor A·富克斯P·H·瓦德尼尔A·辛格M·达尔方索H·D·波斯
Owner ASML NETHERLANDS BV
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More