Photoelectric conversion element and image sensor using same

A photoelectric conversion element and image sensor technology, applied in the field of image sensors, can solve the problems of reduced sensitivity and reduced light volume, and achieve the effects of small dark current, high photoelectric conversion efficiency, and high color selectivity

Active Publication Date: 2017-08-29
TORAY IND INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the size of the pixel is further reduced, but since the size becomes smaller, the amount of light reaching the photoelectric conversion element of each pixel is reduced, and therefore, a decrease in sensitivity becomes a problem

Method used

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  • Photoelectric conversion element and image sensor using same
  • Photoelectric conversion element and image sensor using same
  • Photoelectric conversion element and image sensor using same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0193] Photoelectric conversion elements using Compound D-1 and Compound A-1, both of which have the same skeleton, were fabricated as follows.

[0194] A glass substrate (manufactured by Asahi Glass Co., Ltd., 15 Ω / □, electron beam deposition product) on which a 150-nm ITO transparent conductive film was deposited was cut into 30×40 mm and etched. The obtained substrate was ultrasonically cleaned with acetone and "Semico Clean (registered trademark) 56" (manufactured by Furuuchi Chemical Co., Ltd.) for 15 minutes each, and then washed with ultrapure water. Next, it was ultrasonically washed with isopropanol for 15 minutes, then immersed in hot methanol for 15 minutes, and dried. This substrate was subjected to UV-ozone treatment for 1 hour immediately before device fabrication.

[0195] Next, 30nm of PEDOT / PSS (Clevios TM P VP AI4083) as an electron blocking layer. The substrate was set in a vacuum evaporation device, and exhausted so that the vacuum degree in the device ...

Embodiment 2～11

[0210] When vapor-depositing the photoelectric conversion layer, instead of Compound D-1 and Compound A-1, vapor-deposition was performed in the same manner as in Example 1 except that the combinations of p-type semiconductor materials and n-type semiconductor materials shown in Table 1 were used for vapor deposition. Fabrication of photoelectric conversion elements. The results are shown in Tables 1-2.

[0211] [chemical formula 8]

[0212]

[0213] [chemical formula 9]

[0214]

[0215] [chemical formula 10]

[0216]

[0217] [chemical formula 11]

[0218]

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PUM

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Abstract

The invention discloses a photoelectric conversion element and an image sensor using the same. The photoelectric conversion element is configured such that: at least one organic layer is present between a first electrode and a second electrode; and the organic layer contains at least two compounds in combination, said two compounds having the same skeleton and different substituents.

Description

technical field [0001] The present invention relates to a photoelectric conversion element capable of converting light into electrical energy and an image sensor using the same. Background technique [0002] A photoelectric conversion element capable of converting light into electrical energy can be applied to solar cells, image sensors, and the like. In particular, image sensors that read current generated by incident light in photoelectric conversion elements using CCD or CMOS circuits are widely used. [0003] Conventionally, in an image sensor using a photoelectric conversion element, an inorganic substance has been used as a material constituting a photoelectric conversion film. However, since inorganic substances have low color selectivity, it is necessary to use color filters to selectively transmit incident light of each color of red, green, and blue, and to absorb each light with a photoelectric conversion film. However, if a color filter is used, when a fine obje...

Claims

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Application Information

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Patent Type & AuthorityApplications(China)
IPC IPC(8): H01L31/10C07C255/34C07D407/14H01L27/146
CPCC07D407/14C07C255/34H01L27/146H01L31/10C07C255/51Y02E10/549C07D333/36C07D333/56C07D333/72C07D409/04C07D409/06C07D409/12C07D495/04C07D495/14H10K85/623H10K85/624H10K85/615H10K85/622H10K85/6574H10K30/30H10K30/20H10K39/32H01L27/14643H01L2031/0344H10K85/653H10K30/00H10K85/621H10K85/633H10K85/636H10K85/655H10K85/211H10K85/311H10K85/6572H10K85/6576C09B23/105C09B57/008
Inventor梅原正明富永刚权晋友
OwnerTORAY IND INC