Method for improving photoelectrode photoproduction carrier separation through compensation doping

A technology for compensating doping and separation efficiency, applied in the field of solar energy utilization, and can solve problems such as increasing carrier recombination

Inactive Publication Date: 2017-09-01
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, it is inevitable to introduce a new surface, which will enter a large number of defects, which will increase the recombination of carriers as the recombination centers of the carriers.

Method used

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  • Method for improving photoelectrode photoproduction carrier separation through compensation doping
  • Method for improving photoelectrode photoproduction carrier separation through compensation doping
  • Method for improving photoelectrode photoproduction carrier separation through compensation doping

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Embodiment 1

[0036] Preparation of homojunction Mo:BiVO by a modified metal-organic precipitation method 4 / Co:BiVO 4 (Mo doping concentration is 3% Co doping concentration is 6%, Mo:BiVO 4 The number of layers is 3 layers, Co:BiVO 4 1 layer) photoelectrode. First, Mo:BiVO was prepared using a precursor solution containing Mo 4 layer. Then, the precursor solution containing Co was deposited on the Mo:BiVO 4 Layer used to prepare Co:BiVO 4 layer, forming Mo:BiVO 4 / Co:BiVO 4 Homojunction photoelectrodes. Mo:BiVO 4 / Co:BiVO 4 The number of layers of the homojunction is also 4 layers. Mo:BiVO 4 / Co:BiVO 4 Mo:BiVO in homojunction 4 The number of layers is 3 layers, Co:BiVO 4 The number of layers is 1 layer.

[0037] Specifically include the following steps:

[0038] First, Mo:BiVO was prepared using a precursor solution containing Mo 4 layer. 0.2mol / L Bi(NO 3 ) 3 ·5H 2 O is dissolved in the glacial acetic acid solution, 0.03mol / L vanadyl acetylacetonate is added in the ac...

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Abstract

The invention relates to a method for improving photoelectrode photoproduction carrier separation through compensation doping. The method includes the following steps that (1) a plurality of Mo:BiVO4 thin films are prepared on the surface of a conducting substrate, wherein Mo:BiVO4 is BiVO4 doped with Mo6+; and (2) a Co:BiVO4 thin film is prepared on the surface of each Mo:BiVO4 thin film, wherein Co:BiVO4 is BiVO4 doped with Co2+, and a preparing method of the Co:BiVO4 includes the following steps that a glacial acetic acid mixed solution of bismuth nitrate and cobalt nitrate and a diacetone solution of acetylketone vanadium are mixed to obtain a first total mixed solution, then the first total mixed solution is coated to the surface of the Mo:BiVO4 thin films, and drying and calcining are carried out to prepare a Mo:BiVO4/Co:BiVO4 photoelectrode. Perfect lattice matching of the Mo:BiVO4 and the Co:BiVO4 greatly reduces the interface defect number, and compounding of carriers is further reduced.

Description

technical field [0001] The invention belongs to the technical field of solar energy utilization, and in particular relates to a method for increasing BiVO by compensating doping 4 A method for photoelectrode photogenerated carrier separation efficiency, using different metal ions to control Mo:BiVO 4 / Co:BiVO 4 Methods for photogenerated carrier separation efficiency and photoelectrochemical activity within and at the interface of photoelectrodes. Background technique [0002] Energy shortage and environmental pollution have become the most serious problems faced by countries all over the world. How to effectively solve energy and environmental problems is of great significance to the entire human society. Solar energy, as a new energy source with abundant reserves, low price and green environmental protection, has received widespread attention. Recently, various high and new technologies based on solar energy utilization have attracted extensive attention of researchers ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25B11/04C25B1/04
CPCC25B1/04C25B11/051C25B11/073Y02E60/36Y02P20/133
Inventor 王泽岩张博黄柏标张晓阳秦晓燕王朋刘媛媛张倩倩
Owner SHANDONG UNIV
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