A Method for Obtaining Single Event Flip Cross Section Caused by Direct Ionization of Low-Energy Protons
A single event flipping and acquisition method technology, applied in the field of single event flipping section acquisition, can solve problems such as poor referenceability and complicated calibration process
Active Publication Date: 2018-10-26
NORTHWEST INST OF NUCLEAR TECH
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[0008] Aiming at the disadvantages of complex calibration process and poor referenceability of the existing methods for obtaining single particle inversion cross-sections caused by direct ionization of low-energy protons, the present invention provides a simulation-based method for obtaining single-particle inversion cross-sections caused by direct ionization of low-energy protons, which has sensitive volume parameters Gain the advantages of high efficiency and good execution
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[0105] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.
[0106] like figure 1 As shown, the method for acquiring the single event flip section caused by direct ionization of low-energy protons provided by the present invention comprises the following steps:
[0107] 1] Select the researched semiconductor memory device, such as a certain type of SRAM, and obtain the material composition, geometric structure and doping parameters of the memory from the manufacturer of the SRAM (silicon dioxide 1, tungsten, titanium 2 , silicon 3, aluminum 4), in TCAD (Technology Computer Aided Design, i.e. semiconductor process simulation and device simulation tool), the device model of this SRAM is established by the device model editing language, such as figure 2 shown.
[0108] 2] Solve the numerical calculation model equations of semiconductor devices for the device model of the static random access memory unit,...
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The invention provides a method for obtaining single event upset cross sections caused by direct ionization of low-energy protons. The method comprises the steps of building a device model of a researched semiconductor storage device; obtaining a butterfly characteristic curve of the device model; performing calibration on the butterfly characteristic curve of the device model; adding a heavy ion single event effect physical model to a numerical calculation model of the semiconductor device; setting a sampling mode of parameters of the heavy ion single event effect physical model; obtaining single event upset cross sections caused by heavy ions with different LET values and different incident angles; calculating single particle effect sensitive volume parameters of the device model; building a geometric structure model of the researched semiconductor storage device; setting a sampling mode of low-energy proton sources; and obtaining the single event upset cross sections of the low-energy protons with different energy. According to the method, the sensitive volume parameter obtaining efficiency is improved; and the method has the advantages of low cost, high calculation efficiency, good executability and the like.
Description
technical field [0001] The invention belongs to the technical field of space radiation effect and reinforcement, and relates to a method for obtaining a single-particle flip section caused by direct ionization of low-energy protons. The low-energy protons mentioned in the present invention refer to protons with energy less than 10 MeV. Background technique [0002] There are a large number of high-energy particles in the universe. The high-energy particles penetrate the shielding layer of the spacecraft and enter the internal electronic system and interact with the semiconductor devices in the system to generate electron-hole pairs. The electron-hole pairs are sensitive circuits in the system. After the nodes are collected, the system function is damaged, which affects the reliable operation of the spacecraft in orbit. This effect is the result of the action of a single particle, so it is called a single event effect. [0003] There are two mechanisms for protons in cosmic...
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IPC IPC(8): G06F17/50
CPCG06F30/20
Inventor 赵雯王忠明陈伟丛培天郭晓强陈荣梅罗尹虹丁李利郭红霞王园明潘霄宇王坦王勋
Owner NORTHWEST INST OF NUCLEAR TECH