Apparatus and methods for actively-controlled transient overstress protection with false condition shutdown
An overstress, transient technology, applied in emergency protection circuit devices, emergency protection circuit devices for limiting overcurrent/overvoltage, circuit devices, etc., can solve the problems of surface charge accumulation, junction damage, metal damage, etc.
Active Publication Date: 2017-09-12
ANALOG DEVICES INC
View PDF3 Cites 3 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
High power dissipation can increase IC temperature and can cause many problems such as gate oxide punch through, junction damage, metal damage and surface charge buildup
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0016] The following detailed description of certain embodiments presents various descriptions of specific embodiments of the invention. However, the invention can be embodied in many different ways as defined and covered by the claims. In this specification, reference is made to the drawings, wherein like reference numbers may indicate identical or functionally similar elements.
[0017] Certain electronic systems include overload protection circuitry to protect circuits or components from transient overstress events. To help ensure that electronic systems are reliable, manufacturers can test electronic systems under defined stress conditions, which can be described by standards set by various organizations, such as the Joint Electron Device Engineering Council (JEDEC), the International Electrotechnical Commission (IEC), and the Automotive Engineering Council (AEC). Standards can cover a wide range of transient overstress events, including electrostatic discharge (ESD) eve...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
Apparatus and methods for transient overstress protection with false condition shutdown are provided herein. In certain configurations, a high-voltage tolerant actively-controlled protection circuit includes a transient overstress detection circuit, a clamp circuit electrically connected between a first node and a second node, a bias circuit that biases the clamp circuit, and a false condition shutdown circuit. The transient overstress detection circuit generates a detection signal indicating whether or not a transient overstress event is detected between the first and second nodes. Additionally, the false condition shutdown circuit generates a false condition shutdown signal based on low pass filtering a voltage difference between the first and second nodes, thereby determining independently whether or not power is present. The bias circuit controls operation of the clamp circuit in an on state or an off state based on the detection signal and the false condition shutdown signal.
Description
technical field [0001] Embodiments of the present invention relate to electronic systems, and more particularly to actively controlled transient overvoltage protection circuits. Background technique [0002] Certain electronic systems may be exposed to transient overstress events or short duration electrical signals with rapidly changing voltages and high power. Transient overstress events may include, for example, electrostatic discharge (ESD) events resulting from the sudden release of electrical charge from an object or person to an electronic system. [0003] Transient overstress events can damage or destroy integrated circuits (ICs) due to overvoltage conditions and high levels of power dissipation in a relatively small area of the IC. High power dissipation can increase IC temperature and can cause many problems such as gate oxide punch through, junction damage, metal damage and surface charge buildup. Contents of the invention [0004] In one aspect, an integrat...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): H02H9/04
CPCH02H9/005H02H9/045H02H9/046H01L27/0285H02H9/04H03K17/305H01L27/0259
Inventor S·帕萨萨拉希J·萨克多
Owner ANALOG DEVICES INC