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Polycrystalline ingot semi-molten efficient crucible process

A polycrystalline ingot and crucible technology, which is applied in the field of polycrystalline ingot semi-melting high-efficiency crucible technology, can solve the problems of crystalline silicon differences and nucleation mechanisms

Inactive Publication Date: 2017-09-22
NANTONG ZONGYI NEW MATERIAL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The seeded high-efficiency polysilicon technology is the epitaxial growth of silicon materials, while the seedless high-efficiency polysilicon technology is a heterogeneous nucleation; although both can obtain high-quality small-grain high-efficiency polysilicon ingots, but due to the nucleation mechanism Different, there are some differences in the crystalline silicon grown by the two techniques

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0020] A polycrystalline ingot semi-melting high-efficiency crucible process, including the following steps: crucible preparation - spray coating - charging - melting to measure seed crystal height - crystal growth - cooling; wherein:

[0021] In the preparation of the crucible: the inner diameter of the crucible is controlled at 1020-1021mm, and the high-efficiency layer of the crucible adopts imported quartz sand with a purity >99.995% and Fe <0.2ppm, which can isolate the metal impurities of the crucible from diffusing into the silicon material;

[0022] In the spraying: using a semi-atomized and semi-wet process, the bottom is sprayed 4 times to protect the bottom seed coating;

[0023] In the charging: use broken polycrystals with a diameter of less than 5mm as the bottom seed crystal material, and the height of the seed crystal material is controlled to 20mm to guide the crystal growth;

[0024] In the melting measurement of seed crystal height: adopt dual power control ...

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Abstract

The invention discloses a polycrystalline ingot semi-molten efficient crucible process. The process includes following steps: preparing a crucible; spraying; loading; melting and measuring seed crystal height; growing crystal; cooling. A high-purity efficient crucible is adopted, inner diameter of the crucible is increased from 1000mm to 1020mm, and red zones of side rods are reduced; broken polycrystals of 1-5mm are adopted as a bedding material to serve as seed crystals, crystal growing is guided, and reservation of the seed crystals is guaranteed by optimizing melting anaphase and crystal growing prophase processes.

Description

technical field [0001] The invention belongs to the technical field of polycrystalline silicon ingot casting, and in particular relates to a polycrystalline silicon ingot semi-melting high-efficiency crucible process. Background technique [0002] At present, there are mainly two methods of polysilicon ingot casting: semi-melted ingot method and full-melted ingot method. Among them, the semi-melted ingot casting method (also known as seeded ingot polysilicon method, seeded high-efficiency polysilicon technology, semi-melted high-efficiency method, etc.), refers to the use of millimeter-scale silicon materials as nucleation centers for epitaxial growth, casting low-defect High-quality polysilicon ingot; full melting ingot method (also known as seedless ingot polysilicon method, seedless high-efficiency polysilicon technology, full-melt high-efficiency method, etc.), refers to the use of non-silicon materials at the bottom of the crucible to prepare rough surface Heterogeneou...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B28/06C30B29/06
CPCC30B28/06C30B29/06
Inventor 章勇
Owner NANTONG ZONGYI NEW MATERIAL