A photoelectric mixing hemt and its control method
A control method and frequency mixing technology, applied in circuits, electrical components, and final product manufacturing, etc., can solve problems such as limiting the maximum operating frequency of devices, and achieve the effects of shortening moving distance, eliminating Coulomb attraction, and improving frequency characteristics.
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Embodiment 1
[0021] Such as figure 1 As shown, Embodiment 1 provides a photoelectric mixing HEMT, which includes a substrate 1, a buffer layer 2 is grown on the substrate, and a quantum well active layer is grown on the buffer layer. The quantum well active layer includes, from top to bottom, a first barrier layer 8, a first isolation layer 7, a first channel layer 6, a light absorption layer 12, a second channel layer 5, and a second isolation layer 4. , The second barrier layer 3 . The first barrier layer 8 and the second barrier layer 3 are delta doped. The bandgap width of the first channel layer 6 and the second channel layer 5 is greater than the bandgap width of the light absorbing layer 12; the first channel layer 6 and the second channel layer 5 are both depletion type or enhanced type. The upper surface of the quantum well active layer is provided with a source 10 , a drain 11 and a gate 9 , the gate 9 is located between the source 10 and the drain 11 , and the source 10 and t...
Embodiment 2
[0027] Such as figure 2 As shown, Embodiment 2 provides a photoelectric mixing HEMT, which includes a substrate 1, a buffer layer 2 is grown on the substrate, and a quantum well active layer is grown on the buffer layer. The quantum well active layer includes, from top to bottom, a first barrier layer 8, a first isolation layer 7, a first channel layer 6, a light absorption layer 12, a second channel layer 5, and a second isolation layer 4. , The second barrier layer 3 . The first barrier layer 8 and the second barrier layer 3 are delta doped. The bandgap width of the first channel layer 6 and the second channel layer 5 is greater than the bandgap width of the light absorbing layer 12; the first channel layer 6 and the second channel layer 5 are depletion-type or uniform is enhanced. Wherein, both sides of the buffer layer and the quantum well active layer form a mesa structure by etching, and the buffer layer and the quantum well active layer are located in the middle of ...
Embodiment 3
[0030] Such as image 3 As shown, Embodiment 3 provides a photoelectric mixing HEMT, which includes a substrate 1, a buffer layer 2 is grown on the substrate, and a quantum well active layer is grown on the buffer layer. The quantum well active layer includes, from top to bottom, a first barrier layer 8, a first isolation layer 7, a first channel layer 6, a light absorption layer 12, a second channel layer 5, and a second isolation layer 4. , The second barrier layer 3 . The first barrier layer 8 and the second barrier layer 3 are delta doped. The first channel layer 6 and the second channel layer 5 are both depletion type or enhancement type. The active layer of the quantum well shows that a source 10 , a drain 11 and a gate 9 are provided, the gate 9 is located between the source 10 and the drain 11 , and the source 10 and the drain 11 are located on both sides of the gate 9 . The source 10 and the drain 11 are in ohmic contact.
[0031]The forbidden band width of the fi...
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