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Semiconductor device and manufacturing method thereof

A manufacturing method and semiconductor technology, applied in the direction of semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc.

Pending Publication Date: 2017-09-26
FUJI ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The semiconductor device may have a semiconductor substrate

Method used

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  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof

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Embodiment Construction

[0055] Hereinafter, the present invention will be described through embodiments of the invention, but the following embodiments do not limit the invention of the claims. In addition, all combinations of the features described in the embodiments are not necessarily essential to the solution of the invention.

[0056] figure 1 It is a plan view showing the outline of a semiconductor device 100 according to one embodiment of the present invention. The semiconductor device 100 includes a semiconductor substrate 10 made of silicon or a compound semiconductor. An active region 11 , a spacer 21 , and one or more guard ring portions 50 are provided on the semiconductor substrate 10 .

[0057] Semiconductor elements such as an IGBT (Insulated Gate Bipolar Transistor), a power MOSFET, and a freewheel diode are formed in the active region 11 . The pad 21 is formed in the active region 11 or in a region adjacent to the active region 11 . For example, the pad 21 is electrically connect...

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Abstract

Provided is a guard ring section to which a fine processing is easily applied. Provided is a semiconductor device comprising: a semiconductor substrate; an active region formed in the semiconductor substrate; and a guard ring section formed more outside than the active region in the semiconductor substrate, wherein the guard ring section includes: a guard ring formed in a circular pattern on an upper surface of the semiconductor substrate; an interlayer insulating film formed above the guard ring; a field plate formed in a circular pattern along the guard ring and above the interlayer insulating film; and a tungsten plug formed in a circular pattern along the guard ring and penetrating the interlayer insulating film to connect the guard ring and the field plate.

Description

technical field [0001] The present invention relates to a semiconductor device and a method for manufacturing the semiconductor device. Background technique [0002] Conventionally, a device is known in which a guard ring structure is provided on the outer peripheral portion of a semiconductor element (for example, Patent Document 1). Thereby, the withstand voltage at the time of shutdown is improved. [0003] Patent Document 1: Japanese Unexamined Patent Publication No. 2010-267655 Contents of the invention [0004] Provides a guard ring structure which is easy to microfabricate. [0005] In a first aspect of the present invention, a semiconductor device is provided. The semiconductor device may include a semiconductor substrate. The semiconductor device may include an active region formed on a semiconductor substrate. The semiconductor device may include a guard ring portion formed outside the active region on the semiconductor substrate. The guard ring portion may...

Claims

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Application Information

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IPC IPC(8): H01L29/06H01L27/02
CPCH01L29/0619H01L29/0692H01L29/402H01L29/7393H01L29/66325H01L29/41725H01L29/7811H01L29/7813H01L29/0615H01L29/0878H01L2224/05H01L2224/48463H01L2224/4847H01L29/0696H01L23/585H01L29/401H01L29/45H01L2224/0603H01L21/288H01L23/535H01L29/41708H01L23/58
Inventor 田中裕之大井幸多小野泽勇一伊仓巧裕杉村和俊
Owner FUJI ELECTRIC CO LTD
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