Anti-reflection DLC film with sulfur-series infrared glass as substrate and preparation method of anti-reflection DLC film

A technology of infrared glass and DLC film, which is applied in the field of film manufacturing, can solve the problems of large thermal expansion coefficient, easy to fall off, low softening temperature, etc., and achieve the effects of easy operation, simple preparation, and excellent anti-reflection effect

Active Publication Date: 2017-10-03
NANJING WAVELENGTH OPTO ELECTRONICS SCI & TECH CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] Chalcogenide infrared glass is an emerging infrared lens material. Compared with general infrared materials, this kind of material has a lower softening temperature and a larger thermal expansion coefficient. The coating on chalcogenide glass is easy to fall off, especially the DLC coating. There is no report of coating DLC ​​film on chalcogenide infrared glass in the domestic industry

Method used

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  • Anti-reflection DLC film with sulfur-series infrared glass as substrate and preparation method of anti-reflection DLC film
  • Anti-reflection DLC film with sulfur-series infrared glass as substrate and preparation method of anti-reflection DLC film
  • Anti-reflection DLC film with sulfur-series infrared glass as substrate and preparation method of anti-reflection DLC film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] The grade of glass used for the base layer of chalcogenide infrared glass in Example 1 is IRG202, and the grade of glass used for the base layer of chalcogenide infrared glass in Example 2 is IRG206.

[0032] Example 1

[0033]An anti-reflection DLC film based on chalcogenide infrared glass, comprising a sequentially connected chalcogenide infrared glass base layer, a first ZnSe layer, a first Ge layer, a second ZnSe layer, a second Ge layer, and a third ZnSe layer Layer, third Ge layer and DLC film layer. From the first ZnSe layer to the DLC film layer, the physical thickness of each layer is 400nm, 242nm, 246nm, 177nm, 180nm, 400nm, 1285nm, and the thickness of the chalcogenide infrared glass base layer is 8mm. The anti-reflection band of the anti-reflection DLC film is 8-12 microns.

[0034] The above-mentioned preparation method of the anti-reflection DLC film based on chalcogenide infrared glass is to make a bonding layer and a DLC film layer on the chalcogenide ...

Embodiment 2

[0038] An anti-reflection DLC film based on chalcogenide infrared glass, comprising a sequentially connected chalcogenide infrared glass base layer, a first ZnSe layer, a first Ge layer, a second ZnSe layer, a second Ge layer, and a third ZnSe layer layer, the third Ge layer, the fourth ZnSe layer, the fourth Ge layer and the DLC film layer. From the first ZnSe layer to the DLC film layer, the physical thickness of each layer is 400nm, 242nm, 246nm, 177nm, 180nm, 400nm, 150nm, 365nm, 1285nm, and the thickness of the chalcogenide infrared glass base layer is 5mm. The anti-reflection band of the anti-reflection DLC film is 8-12 microns.

[0039] The preparation method is the same as in Example 1.

Embodiment 3

[0041] The above anti-reflection and DLC film layer is coated on the convex surface of the chalcogenide glass lens, which mainly plays the role of anti-scratch and anti-sand dust, and the other side of the chalcogenide glass lens is also coated with an anti-reflection film to improve the performance of the lens. overall transmittance. On the one hand, the anti-reflection coating on the chalcogenide glass will play the role of anti-reflection, and also need to solve the problem of the firmness of the film layer. The other side of the anti-reflection DLC film obtained in Example 1 is according to G / H / L / H In the order of / L / M / A, increase the anti-reflection layer, wherein, G represents glass, H represents ZnSe, L represents YF3, M represents ZnS, A represents air, each film layer H / L / H / L / M (from The physical thicknesses from the chalcogenide infrared glass layer to the air layer) are: 865nm, 105nm, 296nm, 1046nm, 200nm, where the evaporation rate of ZnSe is 0.4nm / s, YF 3 The eva...

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Abstract

The invention discloses an anti-reflection DLC film with sulfur-series infrared glass as the substrate and a preparation method of the anti-reflection DLC film. The anti-reflection DLC film with the sulfur-series infrared glass as the substrate comprises a sulfur-series infrared glass substrate layer, a DLC film layer and bonding layers arranged between the sulfur-series infrared glass substrate layer and the DLC film layer, and the bonding layers comprise alternating ZnSe layers and Ge layers, and 2-5 layers of the ZnSe layers are arranged. The anti-reflection DLC film with the sulfur-series infrared glass as the substrate has an excellent anti-reflection effect, temperature resistance, mechanical strength and adhesive force and is simple in preparation and easy to operate.

Description

technical field [0001] The invention relates to an anti-reflection DLC film based on chalcogenide infrared glass and a preparation method thereof, belonging to the field of film manufacturing. Background technique [0002] Chalcogenide infrared glass is an emerging infrared lens material. Compared with general infrared materials, this kind of material has a lower softening temperature and a larger thermal expansion coefficient. The coating on chalcogenide glass is easy to fall off, especially the DLC coating. There is no report in domestic industry on coating DLC ​​film on chalcogenide infrared glass. Contents of the invention [0003] In order to solve the defect of difficult coating on chalcogenide infrared glass in the prior art, the present invention provides an anti-reflection DLC film based on chalcogenide infrared glass and a preparation method thereof. [0004] In order to solve the problems of the technologies described above, the technical scheme adopted in the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C28/04C23C14/46C23C14/06
Inventor 李全民吴玉堂朱敏黄胜弟王国力
Owner NANJING WAVELENGTH OPTO ELECTRONICS SCI & TECH CO LTD
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