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Etching composition for copper-based metal film

A composition and metal film technology, which is applied in the direction of surface etching composition, conductive materials, conductive materials, etc., can solve the problems of longer process time, slower etching speed, and inability to form fine pattern metal wiring

Active Publication Date: 2017-10-10
DONGWOO FINE CHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the thickness of the copper metal becomes thicker, when the conventional etching composition is used, the etching rate becomes slower and the process time becomes longer, and the lateral etching rate is faster than the longitudinal direction, so it is difficult to obtain good etching characteristics , metal wiring that cannot form fine patterns

Method used

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  • Etching composition for copper-based metal film
  • Etching composition for copper-based metal film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1～3 and comparative example 1～4

[0064] As shown in the following Table 1, each component was mixed, and the remainder of water was added so that the whole may become 100 weight%, and 180 kg of etching compositions (unit: weight%) were manufactured.

[0065] [Table 1]

[0066]

[0067] ABF: ammonium bifluoride (ammonium bifluoride, NH 4 FHF)

[0068] 5-ATZ: 5-aminotetrazole (5-aminotetrazole)

[0069] IDA: iminodiacetic acid

[0070] NHP: sodium dihydrogen phosphate (sodium dihydrogenphosphate)

[0071] TEG: Triethylene glycol (triethyleneglycol)

experiment example 1

[0073] In order to evaluate the etching performance of the prepared etching composition, Cu / Mo- The double-layer film is then subjected to a photolithography process to form a pattern.

[0074] At this time, in the etching process, a spray etching method experimental equipment (ETCHER (TFT), SEMES Co., Ltd.) was used, and the temperature of the etching composition during the etching process was set to about 30° C. The etching time varies depending on the etching temperature, but it is performed in about 30 to 80 seconds, which is generally used in an LCD etching (Etching) process.

[0075] (1) Side etch

[0076] After etching, the etched cross section of the Cu / Mo—Ti metal film was observed using a SEM (S-4700, Hitachi). For undercutting, the distance between the end of the photoresist and the end of the metal in the pattern formed after etching was measured.

[0077] (2) The ratio of vertical and horizontal etching rates

[0078] During etching, use SEM (S-4700, Hitachi)...

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Abstract

The present invention provides an etching composition comprising an oxide composition, active agent and two or more organic acid mixtures, the two or more organic acid mixtures must contain citric acid, and the weight ratio of citric acid to other organic acids is 0.9: 1 to 1: 0.9. When the copper-based metal film used in the production of the array substrate for a liquid crystal display device of the present invention is etched, even if the thickness of the copper metal is increased, the longitudinal and transverse etching speeds can be uniformly adjusted to form a fine pattern copper-based metal wiring.

Description

technical field [0001] The present invention relates to an etching composition for a copper-based metal film, and more specifically, to a copper-based metal composition capable of forming a fine pattern by uniformly adjusting the longitudinal and lateral etching rates for a copper-based metal film having an increased thickness. Line etching composition. Background technique [0002] Generally speaking, a display panel includes a display substrate on which thin film transistors are formed as switching elements for driving pixels. The above-mentioned display substrate includes various metal patterns, and the above-mentioned metal patterns are mainly formed by photolithography. The above photolithography method is a process of forming a photoresist film on a metal film to be etched formed on a substrate, exposing and developing the photoresist film to form a photoresist pattern. , using the above-mentioned photoresist pattern as an etching resist film, and etching the above-m...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23F1/18C23F1/26C23F1/04
CPCC23F1/04C23F1/18C23F1/26C09K13/00C23F1/14C23F1/34G02F1/1343H01B1/026
Inventor 郑敬燮权五柄朴镛云
Owner DONGWOO FINE CHEM CO LTD