A method of grinding-chemical mechanical polishing of gallium nitride wafers

A gallium nitride crystal and chemical-mechanical technology, used in grinding machine tools, grinding devices, manufacturing tools, etc., can solve the problems of long process time, high material consumption, and increased risk of hard and brittle wafer damage, and simplify the process. steps, the effect of reducing material consumption, reducing system errors and the risk of fragmentation

Active Publication Date: 2019-05-14
镓特半导体科技(上海)有限公司
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

As the thickness decreases, the risk of breakage of hard and brittle wafers increases, the process time is long, and the material consumption is also large. Compared with silicon wafers, the grinding and polishing steps of hard and brittle wafers need to be carried out. Process and equipment improvement

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  • A method of grinding-chemical mechanical polishing of gallium nitride wafers
  • A method of grinding-chemical mechanical polishing of gallium nitride wafers
  • A method of grinding-chemical mechanical polishing of gallium nitride wafers

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Embodiment Construction

[0034] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0035] Please refer to attached picture. It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of ​​the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. Dimensional drawing, the type, quantity and proportion of each component can be change...

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Abstract

The invention provides a method of carrying out grinding and chemico-mechanical polishing on a gallium nitride wafer. The method at least comprises the following steps of treating a gallium surface of the gallium nitride wafer: the gallium nitride wafer is fixed to a grinding platform and the gallium surface faces a grinding head; then a grinding basal plane of the gallium nitride wafer is determined by employing an XRD measuring method, the grinding head having a certain mesh number is parallel to the grinding basal plane and is pressed onto the gallium surface, and the gallium surface is ground to reach the first roughness under the action of a grinding fluid; subsequently, a grinding head having a higher mesh number is increased, the previous step is carried out till the gallium surface is ground to reach the second roughness which is less than the first roughness; finally, the gallium nitride wafer is fixed to a chemico-mechanical polishing platform, and the gallium surface is polished to the surface roughness meeting the technological requirements. The method adopts a direct grinding mode, so that the processing steps are simplified, the material consumption is reduced, the processing time is shortened, and the breakage rate is lowered.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a grinding-chemical mechanical polishing gallium nitride wafer method. Background technique [0002] Today, whether it is consumer electronics, electric vehicles (EV) or home appliances, engineers are facing more stringent requirements to improve power conversion efficiency, increase power density levels, extend battery life, and speed up switching speeds. All this means that the electronics industry will become increasingly dependent on new types of power semiconductors, using process technologies that are no longer based on silicon (Si). With capacities potentially reaching unprecedented performance benchmarks, Gallium Nitride (GaN) is emerging as an emerging process technology impacting the future of power electronics system design. In any power system design, some degree of power conversion loss is certain, but due to the wide frequency gap, GaN exhibits ...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B24B37/04B24B37/10B24B1/00H01L21/304
CPCB24B1/00B24B37/042B24B37/10H01L21/304
Inventor 谢宇
Owner 镓特半导体科技(上海)有限公司
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