A method of grinding-chemical mechanical polishing of gallium nitride wafers

A gallium nitride crystal and chemical-mechanical technology, used in grinding machine tools, grinding devices, manufacturing tools, etc., can solve the problems of long process time, high material consumption, and increased risk of hard and brittle wafer damage, and simplify the process. steps, the effect of reducing material consumption, reducing system errors and the risk of fragmentation
CN107263301BActive Publication Date: 2019-05-14镓特半导体科技(上海)有限公司
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
镓特半导体科技(上海)有限公司
Publication Date
2019-05-14

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Abstract

The invention provides a method of carrying out grinding and chemico-mechanical polishing on a gallium nitride wafer. The method at least comprises the following steps of treating a gallium surface of the gallium nitride wafer: the gallium nitride wafer is fixed to a grinding platform and the gallium surface faces a grinding head; then a grinding basal plane of the gallium nitride wafer is determined by employing an XRD measuring method, the grinding head having a certain mesh number is parallel to the grinding basal plane and is pressed onto the gallium surface, and the gallium surface is ground to reach the first roughness under the action of a grinding fluid; subsequently, a grinding head having a higher mesh number is increased, the previous step is carried out till the gallium surface is ground to reach the second roughness which is less than the first roughness; finally, the gallium nitride wafer is fixed to a chemico-mechanical polishing platform, and the gallium surface is polished to the surface roughness meeting the technological requirements. The method adopts a direct grinding mode, so that the processing steps are simplified, the material consumption is reduced, the processing time is shortened, and the breakage rate is lowered.
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Description

technical field

[0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a grinding-chemical mechanical polishing gallium nitride wafer method. Background technique

[0002] Today, whether it is consumer electronics, electric vehicles (EV) or home appliances, engineers are facing more stringent requirements to improve power conversion efficiency, increase power density levels, extend battery life, and speed up switching speeds. All this means that the electronics industry will become increasingly dependent on new types of power semiconductors, using process technologies that are no longer based on silicon (Si). With capacities potentially reaching unprecedented performance benchmarks, Gallium Nitride (GaN) is emerging as an emerging process technology impacting the future of power electronics system design. In any power system design, some degree of power conversion loss is certain, but due to the wide frequency gap, GaN exhibits ...

Claims

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