Inhibitor for copper-interconnection HDI electroplating porefilling and electroplated copper bath

A technology of electroplating hole filling and inhibitors, which is applied in the fields of printed circuit manufacturing, electrical components, printed circuits, etc., can solve the problems of thick copper plating surface deposition thickness, unsuitable for large-scale production, narrow additive operation window, etc. The effect of long life, improved production efficiency, and wide operating window

Active Publication Date: 2017-10-20
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, Professor Weiping Dou of Chung Hsing University in Taiwan, China uses PEG as an inhibitor, sodium polydithiodipropane sulfonate (SPS) and sodium 3-mercapto-1-propane sulfonate (MPS) as accelerators, and Janus Green B (Janus Green B, JGB) and Diazine Black (DiazineBlack, DB) are leveling agents ([1]W.p.Dow et al.Electrochim.Acta.53(2008)3610–3619.[2]W.-P.Dow et al. / Electrochimica Acta 54(2009)5894–5901.[3]W.P.Dow et al.J.Electrochem.Soc. 152(2005)C425-C434.[4]W.P.Dow et al. )C134-C1 37.), and in an acidic system with an appropriate amount of chloride ions, a large number of experiments have been done on micro-blind vias with different thickness-to-diameter ratios. However, the above-mentioned system with PEG as an inhibitor will There are defects such as thick copper plating surface thickness, narrow additive operation window, and low service life of the plating solution, so it is not suitable for large-scale production

Method used

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  • Inhibitor for copper-interconnection HDI electroplating porefilling and electroplated copper bath

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] Preparation of inhibitors: First, add 100g of analytically pure sulfuric acid into 2000g of ultrapure water to make about 5% sulfuric acid solution, then add 10g of inhibitors into 1000ml of 5% sulfuric acid solution, stir at 30°C for 10min, and prepare inhibitory agent;

[0021] Accelerator preparation: first add 1g of sodium polydithiodipropane sulfonate to 500g of 5% sulfuric acid solution, and stir at 30°C for 10 minutes; then, add 5% sulfuric acid solution to make the volume to 1L, and continue stirring for 1 hour. Accelerator prepared;

[0022] Preparation of electroplating copper bath: in 2000mL acid copper electroplating solution (containing 220g / L CuSO 4 ·5H 2 O, 55gH 2 SO 4 and 60mg / L Cl - ), add inhibitor 40ml, accelerator 12ml successively, obtain electroplating copper bath after stirring 5min;

[0023] The pretreatment process of electroplating is: plate loading, degreasing, water washing, micro-etching, water washing, copper plating, etc. The corrosi...

Embodiment 2

[0027] Take the blind hole type of 120×75μm (where the hole diameter is 120μm) as an example:

[0028] Adopt the suppressor configuration identical with embodiment 1 and electroplating copper bath configuration,

[0029] Accelerator preparation: Add 1g of sodium alcoholthiopropane sulfonate to 1000g of 5% sulfuric acid solution, stir at 30°C for 15min to prepare the accelerator;

[0030] Control the temperature of the plating tank to 20°C, control the cathode current density to 2ASD, and continue electroplating for 30 minutes. The entire electroplating process is completed under 2.5NL / min pumping. Obtain sample; The metallographic micrograph of the blind hole section of the electroplating filling sample prepared by this embodiment is as follows: figure 2 As shown, the surface copper thickness is 8.9 μm.

Embodiment 3

[0032] Taking the 0.3mm×3.0mm (the diameter of the hole is 0.3mm) through-hole as an example, the preparation and experimental conditions of the inhibitor, accelerator and electroplating copper bath are as shown in Example 2, and the electroplated through-hole prepared by this embodiment The metallographic micrograph of the blind hole section of the sample is as follows image 3 As shown; the thickness of the copper at the center point of the through hole is 7.3um.

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Abstract

The invention belongs to the technical field of printed-circuit board electroplating and provides an inhibitor for copper-interconnection HDI electroplating porefilling and an electroplated copper bath. The inhibitor is an organic polyamine compound, the molecular structure of the inhibitor can be found in the specification, and R1 and R2 are phenyl, methyl, methoxyphenyl or phenyl derivatives. The inhibitor has the characteristics that rapid copper filling is performed on the hole bottom of an HDI board blind hole while the growth rate of HDI board surface copper is inhibited, and thus the surface copper can be thin after the blind hole is filled with plated copper; and in addition, the inhibitor furthermore has the advantages that an additive operation window is wide, the service life of a plating solution is long, and the like.

Description

technical field [0001] The invention belongs to the technical field of printed circuit board electroplating, and relates to a micro-blind hole filling copper plating process, in particular to an inhibitor and an electroplating copper bath for copper interconnection HDI electroplating and filling holes. Background technique [0002] PCB board electroplating process is a tedious work, with more and more layers, smaller and smaller via hole diameters (through holes and blind holes), higher performance materials and power lines in the electroplating system The uneven distribution of holes and openings has led to a sharp increase in the current technical difficulty. For example, HDI printed circuit boards and integrated circuit packaging substrates require high-density wiring, and the diameter of through holes and micro-blind holes are <100 μm; In circuit boards, through-hole plating and blind hole copper filling are also required at the same time; therefore, the electroplatin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25D3/38H05K3/42
CPCC25D3/38H05K3/423H05K2203/0713
Inventor 陶志华何为李婧张岱南王守绪陈苑明
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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