Gallium nitride semiconductor device and preparation method therefor
A gallium nitride and semiconductor technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of device breakdown voltage drift, high electric field density, breakdown, etc., to avoid leakage and breakdown, Reduce the electric field intensity and improve the effect of device withstand voltage
Inactive Publication Date: 2017-10-20
SHENZHEN JING XIANG TECH CO LTD
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Problems solved by technology
[0004] However, in the prior art, due to the high electric field density, the leakage and breakdown of the GaN semiconductor device will be caused, which will damage the GaN semiconductor device and reduce the reliability of the GaN semiconductor device.
Furthermore, after repeated high-voltage tests of GaN power devices, the breakdown voltage of the device will drift. This unstable behavior is related to charge traps, which will cause harm to the reliability of the device and should be suppressed
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[0040] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0041] Such as Figure 1a As shown, the embodiment of the present invention provides a gallium nitride semiconductor device, which includes from bottom to top: gallium nitride epitaxial layer 110, composite dielectric layer 120, source 131 and drain 132, gate 133, insulating layer 140, field plate metal layer 150 .
[0042] Wherein, the gall...
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Abstract
The invention relates to the technical field of semiconductor devices, and provides a gallium nitride semiconductor device. The semiconductor device comprises a gallium nitride epitaxial layer; a composite dielectric layer which is disposed on the gallium nitride epitaxial layer; a source electrode, a drain electrode and a grid electrode, which are all disposed on the composite dielectric layer and respectively pass through the composite dielectric layer to be connected with the gallium nitride epitaxial layer; insulating layers which are disposed on the source electrode, the drain electrode, the grid electrode and the composite dielectric layer, wherein the insulating layers are made of silicon dioxide. According to the invention, the semiconductor device is not liable to break down an aluminium nitride gallium layer, thereby avoiding the electric leakage and breakdown of the gallium nitride semiconductor device, effectively protecting the gallium nitride semiconductor device, and improving the reliability of the gallium nitride semiconductor device.
Description
technical field [0001] The invention relates to the field of semiconductor technology, in particular to a gallium nitride semiconductor device and a preparation method thereof. Background technique [0002] Gallium nitride has the advantages of large band gap, high electron saturation rate, high breakdown electric field, high thermal conductivity, corrosion resistance and radiation resistance, so gallium nitride can be used to make semiconductor materials to obtain gallium nitride semiconductor devices . [0003] In the prior art, a gallium nitride semiconductor device is prepared by forming a silicon nitride layer on the surface of the gallium nitride epitaxial layer, etching a source contact hole and a drain contact hole on the silicon nitride layer, and Deposit metal in the electrode contact hole and drain contact hole to form the source and drain; then etch the silicon nitride layer and the aluminum gallium nitride layer in the gallium nitride epitaxial layer to form a ...
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IPC IPC(8): H01L29/06H01L29/40H01L29/47H01L21/335H01L29/778
CPCH01L29/0611H01L29/0638H01L29/402H01L29/475H01L29/66462H01L29/7783
Inventor 刘美华林信南刘岩军
Owner SHENZHEN JING XIANG TECH CO LTD