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Field emission device and manufacture method thereof

A technology of field emission devices and manufacturing methods, applied in the direction of electrical components, cold cathode manufacturing, electrode system manufacturing, etc., to achieve the effects of simplifying the process, improving performance, and reducing costs

Active Publication Date: 2017-11-14
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the lateral structure field emission device needs to be realized through subsequent complex processes

Method used

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  • Field emission device and manufacture method thereof
  • Field emission device and manufacture method thereof
  • Field emission device and manufacture method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] figure 1 A perspective view of a field emission device according to an embodiment of the present invention.

[0032] refer to figure 1 , The field emission device according to the embodiment of the present invention includes a substrate 10, a buffer layer 20 disposed on the substrate 10, an emitter layer 30 and a metal collector layer 40 respectively disposed on both ends of the buffer layer 20, a first electrode layer 101 disposed on the emitter layer 30 and a second electrode layer 102 disposed on the metal collector layer 40, wherein there is a channel 100 between the emitter layer 30 and the metal collector layer 40, In order to realize the ballistic transport of electrons under atmospheric pressure, preferably, the metal collector layer 40 uses a chromium / gold composite thin film electrode or a molybdenum thin film electrode.

[0033] Wherein, the substrate 10 may be made of sapphire, gallium nitride or silicon carbide, etc.; the buffer layer 20 may be made of hi...

Embodiment 2

[0048] refer to image 3 The difference between this embodiment and Embodiment 1 is that the side end of the emitter layer 30 has a plurality of pointed protrusions 30a, and correspondingly, the side of the metal collector layer 40 facing the emitter layer 30 has a plurality of pointed recesses 40a, The plurality of pointed protrusions 30a and the plurality of pointed recesses 40a form a sawtooth shape interfitting with each other. The manufacturing method of the field emission device in this embodiment is the same as that in Embodiment 1, and will not be repeated here.

[0049] The collector electrode in the field emission device of the present invention is made of metal, and the angle of the cusp of the emitter can be designed to be any angle according to the performance of the field emission device. Moreover, since the collector electrode is made of metal material, the wet process It is not necessary to add a mask when etching the dielectric film layer to form a nano-pitch,...

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Abstract

The invention discloses a field emission device. The field emission device includes a substrate, a buffer layer, an emitter layer, a metal collector layer and electrode layers, wherein the buffer layer is arranged on the substrate, the emitter layer and the metal collector layer are respectively arranged at two ends of the buffer layer, and the electrode layers are arranged on the emitter layer and the metal collector layer respectively; and a channel is formed between the emitter layer and the metal collector layer. According to the field emission device of the invention, the collector layer is made of a metal material; the angle of the tip protruding portion of the emitter can be designed to an arbitrary angle according to the performance of the field emission device; since the collector is made of the metal material, a mask is not required to be adopted when wet etching is performed on a dielectric film to form nano spaces; a process is simplified, costs can be reduced, and performance can be improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a field emission device and a manufacturing method thereof. Background technique [0002] Field emission devices are widely used in vacuum microelectronics (including ultra-high-speed high-frequency devices, field emission displays and microwave amplifiers, etc.), and field emission cathodes, as the core of vacuum microelectronic devices, have attracted much attention. To achieve good field emission characteristics is mainly achieved by reducing the electron affinity of the field emission cathode and increasing the field enhancement factor of the nanostructure. Semiconductor materials have become a field emission cathode material in recent years because of their mature micro-nano manufacturing technology. Hot areas. In semiconductor materials, some semiconductor materials have low electron affinity or negative electron affinity, such as the electron affinity o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J1/304H01J9/02
CPCH01J1/304H01J9/025
Inventor 赵德胜黄宏娟张宝顺
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI