Polysilicon ingot furnace with diversion device

Abstract

The invention discloses a polysilicon ingot furnace with a diversion device. The polysilicon ingot furnace comprises a heat insulation cage, a gas pipe and a diversion device. The diversion device is equipped with multiple diversion airways used for dividing input carrier gas into multiple outgoing carrier gas flows. The carrier gas flows are dispersedly and slantly blown to different areas on the surface of liquid silicon, thus effectively increasing contact area of the carrier gas and the surface of liquid silicon and minimizing heat per unit area by carrier gas flow. Thermal drop of liquid silicon in the area is reduced, degree of supercooling is decreased, and impurity nucleation and impurity formation caused by carrier gas are reduced. The outgoing carrier gas flows produce carrier gas stress to liquid silicon so as to drive liquid silicon to flow and to form a rotary flow field for circumferential flow. The rotary flow field is beneficial to transportation and uniform distribution of impurities in liquid silicon. An observation window at the top of the furnace has a field of view leading to the ingot furnace via the diversion device. Through the observation window, state inside the furnace can be observed, and a crystal measurement rod is inserted into the furnace. An infrared detector can detect the state of silicon materials inside the furnace, and the automatic crystal growth process is smoothly carried out.

Description

[0001] This application is a divisional application of a patent application with the application number 201610082954.0, the application date is 2016-02-03, and the name is a polycrystalline silicon ingot furnace with a flow guiding device. technical field [0002] The invention relates to a polysilicon ingot furnace, in particular to a polysilicon ingot furnace with a diversion device for changing the direction of carrier gas, and belongs to the field of crystal growth equipment. Background technique [0003] The polycrystalline silicon ingot casting furnace is mainly composed of an infrared detector 90, a furnace body 11, a flow guiding device 12, a heat insulation cage 14, a heater 15, a heat exchange platform 16 and a graphite column 17, such as figure 1 As shown, the middle part of the end cover 113 on the furnace body 11 is provided with an observation window 114 . The heater 15 includes side heaters 151 and top heaters 152 on four sides. The flow guiding device 12 inc...

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Problems solved by technology

To overcome the problems existing in the prior art: the carrier gas is concentratedly blown to a certain area on the surface of the liquid silicon, without the driving force distributed in the circumferential direction, it is difficult to form a swirling flow field in the liquid silicon; and the carrier gas takes away a large amount of heat from this area , resulting in local overcooling of the liquid silicon in this area, which promotes the nucleation and growth of impurities in the liquid silicon; It is convenient for the operation of the furnace; the crystal measuring rod cannot be inserted into the ingot casting furnace through the diversion device, and the crystal growth rate is inconvenient to measure; the infrared detector cannot detect the state of the silicon material in the furnace through the observation window, and the automatic crystal growth process cannot be carried out normally

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