Method for determining stacking sequence of graphene sample containing single-layer graphene areas

A technology of single-layer graphene and multi-layer graphene, which is applied in the field of testing material physical property parameters, can solve the problems of stacking sequence characterization failure, SAED time-consuming, complex diffraction fringes, etc., and achieve high accuracy and enhanced strength , The effect of a simple test method

Active Publication Date: 2017-11-24
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Description
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  • Application Information

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Problems solved by technology

However, SAED is time-consuming and can only detect stacking order in a small range (approximately 100nm to 1μm)
Moreover, for rotating multi-layer g

Method used

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  • Method for determining stacking sequence of graphene sample containing single-layer graphene areas
  • Method for determining stacking sequence of graphene sample containing single-layer graphene areas
  • Method for determining stacking sequence of graphene sample containing single-layer graphene areas

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Embodiment

[0097] Such as figure 1 As shown, it is a flow chart of the method for determining the stacking sequence of 2-4 layers of graphene samples prepared by chemical vapor deposition proposed in this embodiment, and the method includes the following steps:

[0098] Step 1, using the micromechanical exfoliation method to prepare single-layer graphene samples and AB stacked multi-layer graphene;

[0099] i.e. on SiO 2 / Si composite silicon substrate prepared single-layer graphene samples and AB stacked multilayer graphene by micromechanical exfoliation method, composite silicon substrate SiO 2 a layer is formed over the Si layer;

[0100] Step 2, transferring the multilayer graphene sample grown by chemical vapor deposition to the composite silicon substrate;

[0101] That is to transfer the multilayer graphene sample grown by chemical vapor deposition to the same SiO 2 thickness of SiO 2 / Si composite silicon substrate;

[0102] In this step, the minimum uniform size of the lat...

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Abstract

The invention relates to a method for determining stacking sequence of a graphene sample containing single-layer graphene areas. The method comprises the following steps of using a Raman spectrometer to test the Raman G modulus strengths of single-layer graphene and the graphene sample, and determining the single-layer graphene areas in the graphene sample; using a microscope spectrometer to test the optical contrast spectrum of the multi-layer graphene area adjacent with the single-layer graphene area in the graphene sample, and optical contrast spectrum of different areas of the multi-layer graphene in stacks A and B, and comparing the optical contrast spectrum to obtain feature peak; selecting the laser matched with the feature peak, using a Raman spectrometer with ultra low wave number to test the shear modulus and respiration modulus in different areas of the graphene sample, and comparing with the peaks of the shear modulus and respiration modulus and the predicting result of a linear chain module, so as to determine the total layer number and stacking sequence in different areas of the graphene sample. The method has the advantages that the method is simple and clear; the stacking sequence of the graphene sample with four layers or more can be determined; the damage to the sample is avoided.

Description

technical field [0001] The invention belongs to the field of testing methods and spectroscopic technology of physical property parameters of materials, and more particularly relates to a method for determining the stacking sequence of graphene samples containing single-layer graphene regions. Background technique [0002] Single-layer and multilayer graphene have attracted much attention due to their excellent physical, mechanical, and optical properties, and have many potential applications in the field of next-generation electronic and optoelectronic devices. Typically, two-layer graphene (ex-2LG) of micromachined glass behaves as AB stacking. However, there is usually a certain rotation angle (θ t ), this kind of graphene is corner graphene (t2LG). t2LG exhibits a series of novel physical properties, such as: lower than the Fermi velocity of single-layer graphene, which depends on θ t The optical absorption of , is expected to be applied to photodetection devices and p...

Claims

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Application Information

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IPC IPC(8): G01N21/65
CPCG01N21/65
Inventor 谭平恒林妙玲刘雪璐
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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