Method for determining stacking sequence of graphene sample containing single-layer graphene areas

Abstract

The invention relates to a method for determining stacking sequence of a graphene sample containing single-layer graphene areas. The method comprises the following steps of using a Raman spectrometer to test the Raman G modulus strengths of single-layer graphene and the graphene sample, and determining the single-layer graphene areas in the graphene sample; using a microscope spectrometer to test the optical contrast spectrum of the multi-layer graphene area adjacent with the single-layer graphene area in the graphene sample, and optical contrast spectrum of different areas of the multi-layer graphene in stacks A and B, and comparing the optical contrast spectrum to obtain feature peak; selecting the laser matched with the feature peak, using a Raman spectrometer with ultra low wave number to test the shear modulus and respiration modulus in different areas of the graphene sample, and comparing with the peaks of the shear modulus and respiration modulus and the predicting result of a linear chain module, so as to determine the total layer number and stacking sequence in different areas of the graphene sample. The method has the advantages that the method is simple and clear; the stacking sequence of the graphene sample with four layers or more can be determined; the damage to the sample is avoided.

Description

technical field [0001] The invention belongs to the field of testing methods and spectroscopic technology of physical property parameters of materials, and more particularly relates to a method for determining the stacking sequence of graphene samples containing single-layer graphene regions. Background technique [0002] Single-layer and multilayer graphene have attracted much attention due to their excellent physical, mechanical, and optical properties, and have many potential applications in the field of next-generation electronic and optoelectronic devices. Typically, two-layer graphene (ex-2LG) of micromachined glass behaves as AB stacking. However, there is usually a certain rotation angle (θ t ), this kind of graphene is corner graphene (t2LG). t2LG exhibits a series of novel physical properties, such as: lower than the Fermi velocity of single-layer graphene, which depends on θ t The optical absorption of , is expected to be applied to photodetection devices and p...

AI Technical Summary

Problems solved by technology

However, SAED is time-consuming and can only detect stacking order in a small range (approximately 100nm to 1μm)

Moreover, for rotating multi-layer graphene, as the number of layers increases, the diffraction fringes are extremely complex, and the characterization of the stacking order also fails.

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