A positioning method for uv-liga process photolithography
A UV-LIGA and lithography technology, which is applied in the field of semiconductor technology and MEMS technology, can solve problems such as poor alignment, achieve improved accuracy, clear alignment of lithography positioning marks, and improve lithography overlay. Effect of Alignment Accuracy
Inactive Publication Date: 2019-01-22
THE 41ST INST OF CHINA ELECTRONICS TECH GRP
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Problems solved by technology
[0007] The purpose of the present invention is to aim at the deficiency of poor photolithographic alignment of thick glue of ordinary ultraviolet lithography machine, and proposes a kind of using the positioning mark on the positioning coated glass plate to make the two photolithographic alignments coincide with the same positioning mark, reducing Positioning Method for Photolithographic Patterns in UV-LIGA Process Based on Pattern Alignment Deviation
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[0030] The specific embodiment of the present invention will be further described below in conjunction with accompanying drawing and specific embodiment:
[0031] Such as Figure 1-Figure 5 As shown, a method for lithographic pattern positioning in UV-LIGA process specifically includes the following steps: Step 1: Select two positioning coated glass plates 1;
[0032] Step 2: bonding two positioning coated glass plates 1 to both ends of the circuit substrate 2;
[0033] Step 3: Make the first positioning mark 13 on the positioning coated glass plate by photolithography, the first positioning mark is located in the positioning area 5, and use the positioning mask offset plate for positioning in the photoetching process, and the positioning mask offset plate There is a second positioning mark;
[0034] Step 4: Carry out the first gluing photolithography on the circuit substrate 2, make the bottom photoresist pattern 6 on the first glue layer 3, and use the bottom mask offset 4...
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Abstract
The invention discloses a method for positioning a photolithography pattern in a UV-LIGA process, and specifically relates to the technical fields of semiconductor technology and micro-electromechanical system technology. The method mainly includes: selecting two positioning coated glass plates; bonding the two positioning coated glass plates to both ends of the circuit substrate; using a positioning mask offset plate to make a first positioning mark on the positioning coated glass plate by photolithography, Use the bottom mask offset plate and the top layer mask offset plate to make the bottom and top layer photoresist patterns respectively. When the photolithography is exposed, ensure the third positioning mark of the bottom mask plate, the fourth positioning mark and the first positioning mark of the top mask plate completely coincident. The position and graphic size of the second positioning mark on the positioning mask completely coincides with the fourth positioning mark on the top mask plate and the third positioning mark on the bottom mask plate; finally remove the positioning coated glass plate to complete the double-layer high-precision photoresist pattern production.
Description
technical field [0001] The invention relates to the technical fields of semiconductor technology and micro-electromechanical system technology, in particular to a positioning method for photolithographic patterns used in UV-LIGA technology. Background technique [0002] MEMS (Micro-Electro-Mechanical System) is one of the hot spots of science and technology and industry in the 21st century, and micro-fabrication technology is an important basis for the development of MEMS. LIGA (X-ray deep lithography, electroforming and microreplication) and UV-LIGA technology are two very important technologies in microfabrication. In the field of micromechanics, it is often necessary to use a microstructure with a certain thickness and a high aspect ratio. LIGA and UV-LIGA technology are important means of making such a microstructure. The process of UV-LIGA technology is basically the same as that of LIGA technology, except that it does not need to use synchrotron radiation X-ray source...
Claims
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IPC IPC(8): G03F9/00
CPCG03F7/2004G03F9/7023
Inventor 许延峰王进马子腾
Owner THE 41ST INST OF CHINA ELECTRONICS TECH GRP