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Method for controlling magnetron sputtering equipment in HJT battery production

A magnetron sputtering and equipment technology, applied in sputtering coating, circuits, electrical components, etc., can solve the problems affecting the coating efficiency and productivity, high battery voltage, and many manpower and material resources required to improve efficiency and The effect of productivity, life cycle improvement, manpower and material saving

Active Publication Date: 2022-04-05
JINENG CLEAN ENERGY TECH LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

2) The opening voltage of the battery is high
Vacuuming takes a long time, not only requires more manpower and material resources, but also affects the coating efficiency and production capacity

Method used

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  • Method for controlling magnetron sputtering equipment in HJT battery production

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Embodiment Construction

[0020] The specific implementation manners of the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention.

[0021] Such as figure 1 As shown, the method for manipulating magnetron sputtering equipment in HJT battery production provided by the present invention comprises the following steps:

[0022] S1, install the ITO rotating target on the target position of the magnetron sputtering equipment.

[0023] S2, evacuate the magnetron sputtering equipment, and evacuate the vacuum degree of the magnetron sputtering equipment to below 2E-4Pa.

[0024] S3, setting the rotational speed of the target to 5 rap, and turning on the target rotation.

[0025] Wherein, the rotational speed refers to the rotational speed of the rotating motor that controls the target material. The rotational...

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Abstract

The invention relates to a method for controlling magnetron sputtering equipment in HJT battery production, and belongs to the technical field of solar battery production. Comprising the following steps: installing an ITO rotating target material on a target position of magnetron sputtering equipment; the magnetron sputtering equipment is vacuumized, and the vacuum degree of the magnetron sputtering equipment is vacuumized to be below 2E-4Pa; the rotating speed of the target material is set to be 5 rap, and the target material is started to rotate; ar is introduced into the magnetron sputtering equipment at the flow rate of 200 sccm, and O2 is introduced into the magnetron sputtering equipment at the flow rate of 0.8-3.5 sccm; starting a DC power supply of magnetron sputtering equipment, adjusting power to 9.3 kw, and reducing an arc striking threshold to 50% of a general range of a sputtering process; and starting the magnetron sputtering equipment to carry out silicon wafer coating. On the premise of not influencing silicon wafer coating, the service life cycle of the ITO rotating target material is greatly prolonged, the silicon wafer coating efficiency and productivity are effectively improved, and manpower and material resources are saved.

Description

technical field [0001] The invention relates to the technical field of solar cell production, in particular to a method for manipulating magnetron sputtering equipment in the production of HJT cells. Background technique [0002] An HJT (heterojunction) cell is an N-type cell, which is a photovoltaic cell made using crystalline silicon (c-Si) and amorphous silicon (α-Si) thin films. The HJT battery process is simpler than PERC and PERT. The main process includes texture cleaning, growth of amorphous silicon film (CVD deposition of boron and phosphorus), double-sided TCO (transparent conductive film), screen printing and sintering. The technical advantages of HJT batteries include: 1) The battery structure is simple and the process flow is short. 2) The opening voltage of the battery is high. 3) The HJT battery process is generally below 200°C, and has low requirements for silicon substrate materials; less heat energy input, and low requirements for environmental cleanlines...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/08H01L31/20
CPCY02P70/50
Inventor 杨骥鲁林峰黄金李东栋杨立友王继磊贾慧君
Owner JINENG CLEAN ENERGY TECH LTD