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Model Correction Method for Thin Film Transistor Output Characteristics

A thin-film transistor and output characteristic technology, which is applied in the field of thin-film transistor output characteristic model correction, can solve problems such as not being able to perfectly apply the output characteristic curve, and achieve accurate prediction results

Active Publication Date: 2020-05-15
SUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, the above method is not perfectly applicable to a variety of V gs The output characteristic curve under the condition of

Method used

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  • Model Correction Method for Thin Film Transistor Output Characteristics
  • Model Correction Method for Thin Film Transistor Output Characteristics
  • Model Correction Method for Thin Film Transistor Output Characteristics

Examples

Experimental program
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Embodiment 1

[0029] Such as figure 1 As shown, the method for modifying the output characteristic model of the thin film transistor in this embodiment takes an amorphous indium gallium zinc oxide thin film transistor as an example. Set the gate voltage V when the amorphous indium gallium zinc oxide thin film transistor is working gs Respectively V gs =6V, 9V, 12V, 15V;

[0030] When the thin film transistor is operating in the saturation region, the drain current applicable to the linear region is corrected, which specifically includes: the drain current correction formula is:

[0031]

[0032] Where V deff Is the effective drain voltage, V deff =V D -V dsat , V D Is the drain voltage, V dsat Is the oversaturation voltage;

[0033] I d It is the current obtained by the uncorrected drain current model applicable to the linear region.

[0034] Such as figure 1 , 2 It is the fitting result of applying the modified model to amorphous indium gallium zinc oxide thin film transistors. The four out...

Embodiment 2

[0037] Such as image 3 As shown, the method for modifying the output characteristic model of the thin film transistor of this embodiment takes a polysilicon thin film transistor in a metal-induced lateral crystallization process as an example. Also set the gate voltage V when the polysilicon thin film transistor of the metal-induced lateral crystallization process works gs Respectively V gs = 6V, 9V, 12V, 15V. The difference between this embodiment and Embodiment 1 lies in the difference in the constant α.

[0038] When the thin film transistor is operating in the saturation region, the drain current applicable to the linear region is corrected, which specifically includes: the drain current correction formula is:

[0039]

[0040] Where V deff Is the effective drain voltage, V deff =V D -V dsat , V D Is the drain voltage, V dsat Is the oversaturation voltage; I d It is the current obtained by the uncorrected drain current model applicable to the linear region.

[0041] Such a...

Embodiment 3

[0043] Such as Figure 4 As shown, the method for correcting the output characteristic model of the thin film transistor of this embodiment takes the polysilicon thin film transistor of the excimer laser annealing crystallization process as an example. Set the gate voltage V of the polysilicon thin film transistor working in the excimer laser annealing crystallization process gs Respectively V gs = 6V, 9V, 12V, 15V. This embodiment is different from Embodiments 1 and 2 in the constant α.

[0044] When the thin film transistor is operating in the saturation region, the drain current applicable to the linear region is corrected, which specifically includes: the drain current correction formula is:

[0045]

[0046] Where V deff Is the effective drain voltage, V deff =V D -V dsat , V D Is the drain voltage, V dsat Is the oversaturation voltage; I d Is the uncorrected drain current in the linear region.

[0047] Such as Figure 4 It is the fitting effect of applying the modified mod...

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Abstract

The invention specifically relates to a thin film transistor output characteristic model correction method, which is designed for providing a same fitting constant suitable for output characteristics under the condition of multiple different gate voltages Vgs. The thin film transistor output characteristic model correction method comprises the steps of determining the same fitting constant alpha suitable for the output characteristics under the condition of a group of different gate voltages Vgs of a thin film transistor; and determining a corrected drain current by adopting the following correction formula defined in the specification, wherein Vdeff is an effective drain voltage, Vdeff is equal to VD-Vdsat, VD is a drain voltage, Vdsat is an oversaturated voltage, and Id is an uncorrected drain current of a linear region. The prediction of device characteristics by a thin film transistor current model is more accurate.

Description

Technical field [0001] The invention belongs to the field of analog integrated circuit design, and specifically relates to a method for modifying the output characteristic model of a thin film transistor. Background technique [0002] When the thin film transistor is working, if the gate voltage V gs Fixed at drain voltage V D When it is smaller, the drain current increases linearly with the increase of the drain voltage. At this time, the device works in the linear region, such as Figure 5 Shown. And when the drain voltage V D Reach saturation voltage V dsat At this time, the free charge density of the drain of the transistor is 0, and the conductance of the drain is 0, that is, the current does not follow V D Increase and increase, when the device enters the saturation region, such as Figure 4 Shown. When the drain voltage V D Over saturation voltage V dsat When the free charge density is 0, the point at which the free charge density is 0 will move from the drain to the sou...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F30/367
CPCG06F30/36G06F30/367
Inventor 王明湘韩志远
Owner SUZHOU UNIV
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