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Method for cleaning chip

A technology for cleaning wafers and wafers, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems that cannot meet the requirements of the cleaning process, and achieve the effect of avoiding cross-infection and easy removal

Inactive Publication Date: 2017-11-24
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

With the continuous improvement of device integration, the cleaning effect of this cleaning method on the surface particles of the wafer has been unable to meet the requirements of the cleaning process.

Method used

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Embodiment 1

[0029] Before growing a thin film on a wafer, a cleaning process is usually performed to ensure the cleanliness of the wafer and avoid buried particle defects caused by unclean cleaning after the thin film grows, which will affect the yield of the wafer. In this embodiment, it is applied to the wafer cleaning process before the film growth, and is especially suitable for the wafer cleaning before the film growth through the furnace tube equipment.

[0030] In the present embodiment, the cleaning method of the present invention is adopted to oxidize the wafer or the film structure formed on the wafer by using Ozone. Specifically, Ozone can be sprayed on the upper and lower surfaces of the wafer to make the oxide layer on the wafer thicker. , or oxidize some attached particles, and then, when cleaning the wafer with SC1 cleaning solution, the oxide layer is removed, and at the same time, the attachments on the wafer surface will be removed together. Before the wafer is cleaned, ...

Embodiment 2

[0042] Photoresist is the blocking sacrificial layer in the ion implantation or etching process. After the ion implantation or etching process is completed, a cleaning process is required. In the cleaning process, the photoresist should be cleaned. At the same time, the photoresist The lower film layer structure loss is less. In the prior art, the cleaning methods of SPM and SC1 are adopted. In this method, the structure under the photoresist will be lost.

[0043] In this embodiment, the wafer cleaning method of the present invention can be used to oxidize the organic photoresist by using Ozone, and the oxidized photoresist will be cleaned more easily during SC1 cleaning. Complete removal of the photoresist can be achieved, avoiding excessive loss of the film layer structure under the photoresist.

[0044] In this embodiment, the photoresist can be a mask layer in the ion implantation process, for example, it can be a mask layer when performing well doping, source-drain dopi...

Embodiment 3

[0047] Dry etching is a method of etching thin films by plasma. During the etching process, the plasma reacts with the thin film to generate volatile substances, so as to achieve the purpose of etching. At the same time of etching, organic matter will be generated By-products, therefore, after dry etching, a cleaning process is required. In the cleaning process, the by-products should be cleaned, and at the same time, the loss of the film itself should be less. In the prior art, the cleaning methods of SPM and SC1 are adopted, and in this method, the loss of the film itself will be caused.

[0048] In this embodiment, using the wafer cleaning method of the present invention, the by-products of organic matter can be oxidized by using Ozone, and the by-products after oxidation will be cleaned more easily during SC1 cleaning. Therefore, a shorter time is used. The complete removal of by-products can be achieved, and excessive loss of the film itself can be avoided.

[0049] The ...

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Abstract

The invention discloses a method for cleaning a chip. The method includes the steps of using a single chip computer platform to conduct cleaning, and when cleaning, using ozone to conduct cleaning firstly, wherein the ozone has an oxidation effect and can further oxidize a contaminant or the film layer of the surface of the chip, subsequently, when an SC1 cleaning solution is used to clean, attachments can be cleared away more easily, the cleaning effect is better, and the yield of products is improved. In addition, according to the cleaning mode of the single chip computer platform, only one single chip is cleaned at one time, which can avoid cross infection. Moreover, the method for cleaning the chip reduces the use of chemicals and reduces the cost of chip cleaning.

Description

technical field [0001] The present application relates to a semiconductor device cleaning process, in particular to a wafer cleaning method. Background technique [0002] In the semiconductor manufacturing process, wafer cleaning is one of the most commonly used processes. The purpose of wafer cleaning is to remove organic substances, metals or other particles attached to the surface of the wafer, so as to avoid adverse effects of the attached substances on subsequent processes. [0003] In the prior art, the method for cleaning the wafer is generally completed by utilizing SC1 (ammonia hydrogen peroxide mixed solution) and HOM (hydrochloric acid ozone mixed solution and mega) or SPM (sulfuric acid hydrogen peroxide mixed solution). With the continuous improvement of device integration, the cleaning effect of this cleaning method on the surface particles of the wafer cannot meet the requirements of the cleaning process. Contents of the invention [0004] In view of this,...

Claims

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Application Information

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IPC IPC(8): H01L21/02
CPCH01L21/02057H01L21/02052
Inventor 刘旭华蒋阳波汪亚军李君刘开源
Owner YANGTZE MEMORY TECH CO LTD
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