Method for cleaning chip

A technology for cleaning wafers and wafers, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems that cannot meet the requirements of the cleaning process, and achieve the effect of avoiding cross-infection and easy removal

Inactive Publication Date: 2017-11-24
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

With the continuous improvement of device integration, the cleaning effect of this cleaning method on

Method used

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Example Embodiment

[0028] Example one

[0029] Before the thin film is grown on the wafer, a cleaning process is usually performed to ensure the cleanliness of the wafer, and to avoid buried particle defects caused by unclean cleaning after the thin film is grown, which affects the yield of the wafer. In this embodiment, it is applied to the wafer cleaning process before thin film growth, and is particularly suitable for cleaning the wafer before thin film growth through the furnace tube device.

[0030] In this embodiment, using the cleaning method of the present invention, Ozone can be used to oxidize the wafer or the film structure formed on the wafer. Specifically, Ozone can be sprayed on the upper and lower surfaces of the wafer to thicken the oxide layer on the wafer. , Or oxidize some attached particles, and then when using SC1 cleaning solution to clean the wafer, the oxide layer will be removed, and at the same time, the attached matter on the surface of the wafer will be removed. Before wa...

Example Embodiment

[0041] Example two

[0042] Photoresist (Photo Resist) is a barrier sacrificial layer in ion implantation or etching process. After the ion implantation or etching process is completed, a cleaning process is required. In the cleaning process, the photoresist must be cleaned. At the same time, the photoresist The film structure underneath is less lost. In the prior art, the cleaning methods of SPM and SC1 are adopted. In this method, the structure under the photoresist will be lost.

[0043] In this embodiment, using the wafer cleaning method of the present invention, the organic photoresist can be oxidized by using Ozone. The oxidized photoresist will be more easily cleaned when SC1 is cleaned. Therefore, a shorter time is used. The photoresist can be completely removed to avoid excessive loss of the film structure under the photoresist.

[0044] In this embodiment, the photoresist can be a mask layer in the ion implantation process, for example, it can be a mask layer in well dopi...

Example Embodiment

[0046] Example three

[0047] Dry etching is a method of etching thin films through plasma. During the etching process, the plasma reacts with the thin film to produce volatile substances, so as to achieve the purpose of etching. At the same time, organic matter will be generated. By-products, therefore, after dry etching, a cleaning process is required. In the cleaning process, the by-products must be cleaned, and at the same time, the film itself will lose less. In the prior art, the cleaning methods of SPM and SC1 are adopted, and this method will cause the loss of the film itself.

[0048] In this embodiment, the wafer cleaning method of the present invention can be used to oxidize organic by-products by using Ozone. The by-products after oxidation will be more easily cleaned during SC1 cleaning. Therefore, a shorter time is used. The by-products can be completely removed, avoiding excessive loss of the film itself.

[0049] The selection of process parameters in this implement...

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Abstract

The invention discloses a method for cleaning a chip. The method includes the steps of using a single chip computer platform to conduct cleaning, and when cleaning, using ozone to conduct cleaning firstly, wherein the ozone has an oxidation effect and can further oxidize a contaminant or the film layer of the surface of the chip, subsequently, when an SC1 cleaning solution is used to clean, attachments can be cleared away more easily, the cleaning effect is better, and the yield of products is improved. In addition, according to the cleaning mode of the single chip computer platform, only one single chip is cleaned at one time, which can avoid cross infection. Moreover, the method for cleaning the chip reduces the use of chemicals and reduces the cost of chip cleaning.

Description

technical field [0001] The present application relates to a semiconductor device cleaning process, in particular to a wafer cleaning method. Background technique [0002] In the semiconductor manufacturing process, wafer cleaning is one of the most commonly used processes. The purpose of wafer cleaning is to remove organic substances, metals or other particles attached to the surface of the wafer, so as to avoid adverse effects of the attached substances on subsequent processes. [0003] In the prior art, the method for cleaning the wafer is generally completed by utilizing SC1 (ammonia hydrogen peroxide mixed solution) and HOM (hydrochloric acid ozone mixed solution and mega) or SPM (sulfuric acid hydrogen peroxide mixed solution). With the continuous improvement of device integration, the cleaning effect of this cleaning method on the surface particles of the wafer cannot meet the requirements of the cleaning process. Contents of the invention [0004] In view of this,...

Claims

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Application Information

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IPC IPC(8): H01L21/02
CPCH01L21/02057H01L21/02052
Inventor 刘旭华蒋阳波汪亚军李君刘开源
Owner YANGTZE MEMORY TECH CO LTD
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