Method for improving surface microdefects of Si modified layer of large-diameter SiC mirror

A micro-defect, silicon carbide technology, used in coating, sputtering, metal material coating processes, etc., can solve problems affecting mirror roughness and smoothness, improve polishing characteristics, reduce surface micro-defects, and prepare The effect of process simplification

Inactive Publication Date: 2017-11-28
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The present invention aims to solve the technical problem that when the large-diameter RB-SiC substrate is modified by the face-up method in the prior art, Si material particles fall off the mirror surface and cause a large number of surface microscopic defects, thereby affecting the mirror surface roughness and smoothness. Method for Microscopic Defects on Surface of Silicon Modified Layer of Aperture Silicon Carbide Mirror

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  • Method for improving surface microdefects of Si modified layer of large-diameter SiC mirror
  • Method for improving surface microdefects of Si modified layer of large-diameter SiC mirror

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Embodiment 1

[0038] The method for improving the microscopic defects on the surface of the silicon modified layer of the large-diameter silicon carbide mirror of the present invention comprises the following specific steps:

[0039] Step 1. Preparation of coating conditions: install the Si target on the sputtering cathode, fix the RB-SiC substrate after surface cleaning on the workpiece fixture of the coating machine, and evacuate the vacuum chamber of the coating machine to 4.5×10 -4 Pa, bake at a temperature of 200°C and keep the temperature constant for 90 minutes;

[0040] Step 2, sputtering cathode Si target surface treatment: pass high-purity Ar gas into the sputtering cathode, adjust the Ar gas flow to 400 sccm, adjust the sputtering cathode power to 3KW, and the sputtering time to 50 minutes to make the high-energy Ar + Ions bombard the target surface;

[0041] Step 3, prepare the Si modified layer: adjust the power of the sputtering cathode to 15KW, adjust the Ar gas flow to 550 ...

Embodiment 2

[0045] The method for improving the microscopic defects on the surface of the silicon modified layer of the large-diameter silicon carbide mirror of the present invention comprises the following specific steps:

[0046] Step 1. Preparation of coating conditions: install the Si target on the sputtering cathode, fix the RB-SiC substrate after surface cleaning on the workpiece fixture of the coating machine, and evacuate the vacuum chamber of the coating machine to 5.0×10 -4 Pa, bake at a temperature of 180°C and keep the temperature constant for 60 minutes;

[0047] Step 2, sputtering cathode Si target surface treatment: pass high-purity Ar gas into the sputtering cathode, adjust the Ar gas flow rate to 350 sccm, adjust the sputtering cathode power to 2KW, and the sputtering time to 40 minutes to make the high-energy Ar + Ions bombard the target surface;

[0048] Step 3, prepare the Si modified layer: adjust the power of the sputtering cathode to 12KW, adjust the Ar gas flow to...

Embodiment 3

[0051] The method for improving the microscopic defects on the surface of the silicon modified layer of the large-diameter silicon carbide mirror of the present invention comprises the following specific steps:

[0052] Step 1. Preparation of coating conditions: install the Si target on the sputtering cathode, fix the RB-SiC substrate after surface cleaning on the workpiece fixture of the coating machine, and evacuate the vacuum chamber of the coating machine to 4.0×10 -4 Pa, bake at a temperature of 220°C and keep the temperature constant for 120 minutes;

[0053] Step 2, sputtering cathode Si target surface treatment: pass high-purity Ar gas into the sputtering cathode, adjust the Ar gas flow rate to 550 sccm, adjust the sputtering cathode power to 4KW, and the sputtering time to 60 minutes to make the high-energy Ar + Ions bombard the target surface;

[0054] Step 3, prepare the Si modified layer: adjust the power of the sputtering cathode to 18KW, adjust the Ar gas flow t...

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Abstract

The invention relates to a method for improving surface microdefects of a Si modified layer of a large-diameter SiC mirror, belongs to the technical field of thin film deposition and solves the technical problems that the mirror surface roughness and smoothness are affected by a large quantity of surface microdefects caused by the fact that Si granules fall on the mirror surface when a large-diameter RB-SiC substrate is modified in a face-up manner in the prior art. According to the method for improving the surface microdefects of the Si modified layer of the large-diameter SiC mirror, a surface modified layer of the mirror containing the RB-SiC substrate is prepared with a mid-frequency magnetron sputtering technology, the substrate is not needed to be turned over, and huge risks caused by the overturning process are avoided; neither carbonization treatment is needed for the substrate surface nor a buffer layer is needed to be prepared, and the preparation process is simplified greatly; a proper amount of N2 as a reaction gas is introduced in a plating process, so that the large quantity of surface microdefects caused by the fact that the Si granules fall on the mirror surface due to characteristics of the Si material are reduced substantially, the polishing performance of the substrate is improved greatly, and the polished substrate surface can be improved greatly.

Description

technical field [0001] The invention belongs to the technical field of thin film deposition, and in particular relates to a method for improving microscopic defects on the surface of a silicon modified layer of a large-diameter silicon carbide mirror. Background technique [0002] Silicon carbide (SiC) has excellent characteristics such as high specific stiffness, high thermal conductivity, small thermal expansion coefficient, and low density. It is an ideal mirror material for space and is widely used in various space projects. SiC mirror body with large size and complex shape can be prepared by reaction sintering method, and the preparation temperature is low, the time is short, and the cost is low, and an almost completely dense SiC sintered body structure can be obtained, whether it is mechanical performance, thermal performance or optical performance. And other aspects can meet the requirements of the mirror. [0003] Space large-aperture mirrors are usually made of RB...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/18C23C14/02
CPCC23C14/35C23C14/021C23C14/185
Inventor 刘震高劲松王笑夷杨海贵王彤彤申振峰
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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