Epitaxial equipment maintenance method

Abstract

The invention provides an epitaxial equipment maintenance method. The epitaxial equipment comprises a reaction cavity, wherein the reaction cavity is provided with an air inlet and an air outlet; a base is arranged in the reaction cavity and is used for carrying a silicon chip; a heat absorption device is also arranged in the reaction cavity, is positioned between the base and the air outlet, and is positioned at the upper half part of the reaction cavity. The epitaxial equipment maintenance method comprises an etching step for removing a polycrystalline silicon layer deposited in the reaction cavity; etching gas of hydrogen chloride and carrier gas of hydrogen gas need to be introduced into the reaction cavity, wherein the etching temperature is 1165 to 1175 DEG C. Compared with the prior art, the epitaxial equipment maintenance method provided by the invention has the advantages that the equipment maintenance period can be effectively prolonged; the maintenance period is improved to a value greater than 60000 micrometers/time; the equipment capacity utilization rate is improved; the production cost is reduced.

Description

technical field [0001] The invention relates to a method for maintaining epitaxy equipment. Background technique [0002] The epitaxy equipment uses the reduction reaction of trichloromonohydrogen silicon or dichloro dihydrogen silicon with hydrogen to grow single crystal epitaxy on a single crystal substrate silicon wafer. With the increase in the number of epitaxial wafers produced, the reaction chamber of the equipment needs to be shut down Clean and maintain, and replace the main parts in the reaction chamber that are lost due to the regular etching of hydrogen chloride, such as the base (including the base ring), thermocouples, etc. [0003] This is because during the epitaxial growth process, in addition to growing single crystal epitaxy on the substrate single crystal silicon wafer, a polysilicon layer will also grow on the surface in other areas of the reaction chamber, and this polysilicon layer will cause particles in the reaction chamber, Abnormal temperature cha...

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Problems solved by technology

[0003] This is because during the epitaxial growth process, in addition to growing single crystal epitaxy on the substrate single crystal silicon wafer, a polysilicon layer will also grow on the surface in other areas of the reaction chamber, and this polysilicon layer will cause particles in the reaction chamber, Abnormal temperature changes, hydrogen chloride can etch away the polysilicon layer covering the inner surface of the reaction chamber, but it also causes the loss of main parts in the chamber

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