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Antireflection film and preparation method thereof and photolithographic mask plate

An anti-reflection film and mask technology, which is used in optics, originals for opto-mechanical processing, and photo-engraving processes on pattern surfaces, can solve problems such as difficulty in meeting process yields, reduce particulate matter, and improve process quality. rate effect

Active Publication Date: 2017-12-26
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Thus, after preparing SiON, the remaining silane SiH 4 Thermal decomposition will occur and Si particles will be generated. In this way, many Si particles will adhere to the surface of SiON with high extinction coefficient. The SiON anti-reflection film with high extinction coefficient will bring many defects on the chip surface, which is difficult to meet the requirements of the process. Rate

Method used

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  • Antireflection film and preparation method thereof and photolithographic mask plate
  • Antireflection film and preparation method thereof and photolithographic mask plate
  • Antireflection film and preparation method thereof and photolithographic mask plate

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Embodiment Construction

[0043] In order to make the above-mentioned purpose, features and advantages of the present application more obvious and understandable, the specific implementation manners of the present application will be described in detail below in conjunction with the accompanying drawings.

[0044] In the following description, a lot of specific details are set forth in order to fully understand the application, but the application can also be implemented in other ways different from those described here, and those skilled in the art can do without violating the connotation of the application. By analogy, the present application is therefore not limited by the specific embodiments disclosed below.

[0045] Secondly, the present application is described in detail in combination with schematic diagrams. When describing the embodiments of the present application in detail, for the convenience of explanation, the cross-sectional view showing the device structure will not be partially enlarge...

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Abstract

The invention provides a photolithographic mask plate. The photolithographic mask plate comprises a substrate, a mask layer positioned above the substrate, a low-extinction-coefficient SiON antireflection film positioned above the mask layer, and photoresist positioned above the SiON antireflection film; and the thickness of the SiON antireflection film can enable the optical path difference between reflected light of the upper surface of the SiON antireflection film and reflected light of the lower surface to be equal to odd 1 / 2 emitted light wavelength, so that the reflected light reflected by the SiON antireflection film cannot be emitted into the photoresist on the upper side, and the photoresist forms precise exposed patterns. In addition, the invention further provides the SiON antireflection film and a preparation method thereof.

Description

technical field [0001] The present application relates to the technical field of semiconductor manufacturing, and in particular to an anti-reflection film, a preparation method thereof, and a photolithography mask. Background technique [0002] Photolithography mask is a structure that makes various functional patterns on film, plastic or glass substrate materials and precisely positions them for selective exposure of photoresist coating. [0003] In order to reduce reflected light during the exposure process, the photolithography mask includes an anti-reflection film disposed under the photoresist. [0004] Existing anti-reflective coatings generally have a double-layer structure, which includes silicon oxynitride (SiON) with a high extinction coefficient and a bottom anti-reflective coating (BARC) located under the SiON with a high extinction coefficient. However, the anti-reflection film with double-layer structure has a diffuse reflection phenomenon, and the reflected l...

Claims

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Application Information

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IPC IPC(8): C23C16/30G03F1/46H01L21/033
CPCC23C16/308G03F1/46H01L21/0332
Inventor 张高升刘聪万先进
Owner YANGTZE MEMORY TECH CO LTD
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