A detection method for PECVD coating effect on silicon wafer
A detection method and technology of silicon wafers, which are applied in semiconductor/solid-state device testing/measurement, sustainable manufacturing/processing, climate sustainability, etc., can solve problems such as cost increase, output reduction, and long time consumption, so as to improve production efficiency effect
Active Publication Date: 2019-06-11
YINGLI ENERGY CHINA
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However, this detection method takes too long, which will reduce the yield and increase the cost
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[0026] In the following description, specific details such as specific system structures and technologies are presented for the purpose of illustration rather than limitation, so as to thoroughly understand the embodiments of the present invention. It will be apparent, however, to one skilled in the art that the invention may be practiced in other embodiments without these specific details. In other instances, detailed descriptions of well-known systems, devices, circuits, and methods are omitted so as not to obscure the description of the present invention with unnecessary detail.
[0027] It should be understood that when used in this specification and the appended claims, the terms "comprising" and "comprises" indicate the presence of described features, integers, steps, operations, elements and / or components, but do not exclude one or Presence or addition of multiple other features, integers, steps, operations, elements, components and / or collections thereof.
[0028] It ...
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The invention provides a detection method for a plasma enhanced chemical vapor deposition (PECVD) coating film of a silicon wafer. The detection method comprises the steps of adjusting a proportion ofsilane and ammonia of each single tube in a process chamber to be consistent; setting silane flow of a first part of single tube in the process chamber to be a first flow value, setting silane flow of a second part of single tube in the process chamber to be a second flow value, and setting silane flow of a third part of single tube in the process chamber to be a third flow value; placing the silicon wafer in a graphite boat, and allowing the graphite boat to enter the process chamber at a first preset speed; allowing the graphite boat loaded with the silicon wafer to stay for a preset time for coating; transferring the graphite boat loaded with the silicon wafer out of the process chamber at a second preset speed; and determining a coating effect of each single tube in the process chamber. Since the graphite load loaded with the silicon wafer can rapidly enter and be transferred out of the process chamber, the detection method provided by the embodiment of the invention can be used for rapidly detecting the coating effect of the silicon wafer, the factor affecting the coating effect is further rapidly judged, and the production efficiency can be improved.
Description
technical field [0001] The invention belongs to the technical field of solar cell preparation, and in particular relates to a method for detecting the PECVD coating effect of a silicon wafer. Background technique [0002] In the solar cell manufacturing process, PECVD (Plasma Enhanced Chemical Vapor Deposition, Plasma Enhanced Chemical Vapor Deposition) is one of the important procedures, and its purpose is to form a layer of anti-reflection film on the surface of the silicon wafer. The reflective film has certain requirements on color, film thickness and refractive index. In the coating process of the chain PECVD equipment, due to the unevenness of each single-tube reaction gas or the slight inhomogeneity, plus the difference in temperature and time, the color difference of the battery sheet is large, the film thickness and refractive index are not uniform, and the design requirements cannot be met. As a result, the conversion efficiency of the battery is affected, so ther...
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IPC IPC(8): H01L21/66H01L31/18H01L31/0216
CPCY02P70/50
Inventor 张晓朋李翠双魏双双张建旗尚琪
Owner YINGLI ENERGY CHINA