Method for homoepitaxially growing monocrystalline diamond on basis of type IIa natural diamond

A single crystal diamond and homoepitaxial technology, applied in the field of diamond, can solve the problem of low purity of carbon source, and achieve the effect of improving purity, improving utilization rate and good quality

Inactive Publication Date: 2018-01-09
武汉普迪真空科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Based on this, in view of the limitations existing in the above-mentioned status quo and the low purity of carbon sources used for growing diamonds, the present invention proposes a

Method used

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  • Method for homoepitaxially growing monocrystalline diamond on basis of type IIa natural diamond

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] In the first step, the vacuum chambers of the first microwave plasma chemical vapor deposition device 1 and the second microwave plasma chemical vapor deposition device 2 are communicated with the mechanical pump 3 through the vacuum pipeline 4;

[0025] In the second step, the type IIa natural diamond used as the seed crystal is placed on the sample stage of the first microwave plasma chemical vapor deposition device 1, and the 99.9999% high-purity hydrogen source passes through the hydrogen purification equipment and then passes through the first microwave plasma chemical vapor deposition device. In the reaction chamber of the vapor deposition device 1, the microwave power is adjusted to generate hydrogen plasma, and the process parameters are specifically adjusted as follows: the hydrogen gas flow rate is 300 sccm, the microwave power is 1000 w, and the gas pressure is 18 kPa. Type IIa natural diamond is etched by hydrogen plasma at 1000 ° C. And use the emission spec...

Embodiment 2

[0030] In the first step, the vacuum chambers of the first microwave plasma chemical vapor deposition device 1 and the second microwave plasma chemical vapor deposition device 2 are communicated with the mechanical pump 3 through the vacuum pipeline 4;

[0031] In the second step, the type IIa natural diamond used as the seed crystal is placed on the sample stage of the first microwave plasma chemical vapor deposition device 1, and the 99.9999% high-purity hydrogen source passes through the hydrogen purification equipment and then passes through the first microwave plasma chemical vapor deposition device. In the reaction chamber of the vapor deposition device 1, the microwave power is adjusted to generate hydrogen plasma, and the process parameters are specifically adjusted as follows: the hydrogen gas flow rate is 250 sccm, the microwave power is 1200 w, and the gas pressure is 19 kPa, and the hydrogen plasma at 1050 ° C is used to etch Type IIa natural diamond. And use the em...

Embodiment 3

[0036] In the first step, the vacuum chambers of the first microwave plasma chemical vapor deposition device 1 and the second microwave plasma chemical vapor deposition device 2 are communicated with the mechanical pump 3 through the vacuum pipeline 4;

[0037] In the second step, the type IIa natural diamond used as the seed crystal is placed on the sample stage of the first microwave plasma chemical vapor deposition device 1, and the 99.9999% high-purity hydrogen source passes through the hydrogen purification equipment and then passes through the first microwave plasma chemical vapor deposition device. In the reaction chamber of the vapor deposition device 1, the microwave power is adjusted to generate hydrogen plasma, and the process parameters are specifically adjusted as follows: the hydrogen gas flow rate is 350 sccm, the microwave power is 1500 w, and the gas pressure is 20 kPa, and the hydrogen plasma at 1100 ° C is used to etch type IIa natural diamond. And use the em...

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PUM

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Abstract

The invention discloses a method for homoepitaxially growing a monocrystalline diamond on the basis of a type IIa natural diamond. The method includes the following steps: (Step 1) a reactor for producing a monocrystalline diamond material is provided; (Step 2) the type IIa natural diamond serving as a seed crystal is placed onto a sample holder of the reactor, treating gas is injected into a reaction chamber, plasma is utilized to etch the type IIa natural diamond, and an emission spectrum is utilized to carry out primary diagnosis; (Step 3) the technological parameters of the reactor are adjusted, the homoepitaxial growth of the monocrystalline diamond is carried out, and an emission spectrum is utilized to carry out secondary diagnosis; (Step 4) the deposition of the monocrystalline diamond is completed. By utilizing the microwave plasma chemical vapor deposition method to etch the type IIa natural diamond at high temperature and utilizing a produced carbon source to grow the diamond, the method can effectively increase the purity of the carbon source needed by the growth of the monocrystalline diamond, so the quality of the obtained monocrystalline diamond is good; and moreover, the grown monocrystalline diamond is of a regular shape corresponding to a substrate, so the utilization rate is increased.

Description

technical field [0001] The invention relates to the diamond field, in particular to a method for growing single crystal diamond based on the homogeneous epitaxial growth of type IIa natural diamond. Background technique [0002] Diamond is a wide bandgap semiconductor material with excellent electrical and thermal properties. Compared with traditional wide bandgap semiconductors, diamond has higher electron and hole mobility, greater breakdown strength and high thermal conductivity. These characteristics make diamond a promising application prospect for high-power and high-frequency electronic devices. Diamond is classified according to the amount of nitrogen in it and the way it exists. The presence or absence of nitrogen impurities in diamond directly determines many excellent properties of diamond. Ⅱa gem-quality diamonds contain very little nitrogen (10 -7 Below) and no impurities and inclusions, resulting in high crystal quality and almost no crystal defects, so the m...

Claims

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Application Information

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IPC IPC(8): C30B29/04C30B25/20C30B25/14
Inventor 周焱文
Owner 武汉普迪真空科技有限公司
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