Radio frequency signal transmission-based fan-shaped package structure and manufacturing method thereof

Abstract

The invention relates to a radio frequency signal transmission-based fan-shaped package structure and a manufacturing method thereof. The fan-shaped package structure comprises a plurality of semiconductor chips, a through glass via (TGV) transition board, a through silicon via (TSV) transition board, a first rewiring layer, a second rewiring layer and a third rewiring layer, wherein the first rewiring layer is fabricated on a first surface of the TGV transition board, the semiconductor chips are arranged on the TGV transition board via the first rewiring layer, the second rewiring layer is fabricated on a second surface of the TGV transition board, the TSV transition board is arranged at side edges of the semiconductor chips, a conductive material on an upper surface of the TSV transitionboard is connected with the TGV transition board via the second rewiring layer, and a conductive material on a lower surface of the TSV transition board is connected with a welding ball via the thirdrewiring layer. In the package structure, the shortest radio frequency patch can be led out by the TGV transition board, the radio frequency signal transmission loss is reduced, and meanwhile, the miniaturization of the radio frequency circuit package structure can be achieved.

Description

technical field [0001] The invention belongs to the technical field of packaging of integrated circuits, and in particular relates to a fan-out packaging structure and a manufacturing method based on radio frequency signal transmission. Background technique [0002] As a solution to the miniaturization and low-cost application of electronic system components, fan-out packaging technology is currently developing into a major advanced packaging process with high integration flexibility. This technology does not require a substrate and can reduce weight by more than 40%, meeting the urgent needs of modern electronic equipment systems for miniaturization, low cost, and high integration. [0003] In the traditional packaging method of integrated circuits, it is usually necessary to use through-silicon vias to realize circuit integration, and the carriers around the through-silicon vias (English: through silicon vias, TSV for short) can move freely under the action of electromagne...

AI Technical Summary

Problems solved by technology

[0003] In the traditional packaging method of integrated circuits, it is usually necessary to use through-silicon vias to realize circuit integration, and the carriers around the through-silicon vias (English: through silicon vias, TSV for short) can move freely under the action of electromagnetic or magnetic fields. , will have an impact on adjacent circuits or signals, so when using TSVs to package RF devices, it will affect the transmission quality of RF signals of RF devices

[0004] In addition, at present, most radio frequency devices are packaged in a single chip, and the integration level is low. Therefore, how to realize the integration of radio frequency circuits and small-size packaging without affecting the quality of radio frequency signal transmission has become an urgent problem to be solved.

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