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Optical switch

An optical switch and optical crystal technology, applied in the field of optical switches, can solve the problems of increased power consumption and slow speed, and achieve the effects of improving sensitivity, improving response characteristics and reducing driving voltage.

Active Publication Date: 2018-01-09
FUJIFILM BUSINESS INNOVATION CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the speed becomes slower and the power consumption increases

Method used

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Effect test

no. 1 approach

[0052] (optical switch C)

[0053] figure 1 It is a figure explaining the optical switch C of 1st Embodiment. figure 1 (a) is a sectional view, figure 1 (b) is a plan view, figure 1 (c) is an equivalent circuit.

[0054] The optical switch C described here is a photothyristor T turned on by the input of an optical signal (incident light), and a light emitting element (here, as an example, vertical The cavity surface emitting laser VCSEL (Vertical Cavity Surface Emitting Laser)) is composed of a combination.

[0055] The optical switch C is configured, for example, as an integrated circuit (IC) chip formed of compound semiconductor layers such as GaAs, GaAlAs, and AlAs stacked monolithically (epitaxially) on a substrate 10 such as GaAs.

[0056] pass figure 1 (a) The cross-sectional structure of the optical switch C is illustrated.

[0057] In the optical switch C, the photothyristor T and the vertical cavity surface emitting laser VCSEL are laminated and electrically co...

no. 2 approach

[0233] Figure 12 It is a figure explaining the optical switch C of 2nd Embodiment. Figure 12 (a) is a sectional view, Figure 12 (b) is a plan view, Figure 12 (c) is an equivalent circuit.

[0234] In the optical switch C of the second embodiment, a DBR layer (p anode (DBR) layer 16 ) functioning as an anode of a vertical cavity surface emitting laser VCSEL, a light emitting layer 17 , and The cathode of the vertical cavity surface emitting laser VCSEL functions as the DBR layer (n-cathode (DBR) layer 18 ).

[0235] Furthermore, a tunnel junction (tunnel diode) layer 15 is provided on the n cathode (DBR) layer 18 . The tunnel junction layer 15 is made of n-type impurity (dopant) added (doped) at a high concentration. ++ layer 15a and the p-type impurity doped at high concentration ++ layer 15b.

[0236] Furthermore, on the tunnel junction layer 15, a p-type anode layer 11 (p anode layer 11) functioning as an anode of the photothyristor T, and an n-type gate layer 12 ...

no. 3 approach

[0254] Figure 13 It is a figure explaining the optical switch C of 3rd Embodiment. Figure 13 (a) is a sectional view, Figure 13 (b) is a plan view. Equivalent circuit with Figure 12 The optical switch C of the second embodiment shown in (c) is the same, so description is omitted.

[0255] The optical switch C of the third embodiment includes an opening 20 dug in the center of the photothyristor T. As shown in FIG. The opening 20 has a circular cross-sectional shape and is provided from the surface of the photothyristor T toward the vertical cavity surface emitting laser VCSEL. Furthermore, the cathode electrode 92 is provided in an annular shape on the n-cathode layer 14 so as to surround the opening 20 .

[0256] In addition, the cross-sectional shape of the opening 20 may not be circular, and the shape of the cathode electrode 92 may not be circular.

[0257] In addition, although the opening part 20 is provided so that the center part of the photothyristor T may b...

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Abstract

The invention discloses an optical switch. The optical switch includes: a photothyristor that is switched from an off state to an on state by incident light; a light-emitting element that emits outgoing light when the photothyristor is in the on state; and a tunnel junction layer or a III-V compound layer having metallic conductivity. The tunnel junction layer or the III-V compound layer is disposed between the photothyristor and the light-emitting element.

Description

technical field [0001] The invention relates to an optical switch. Background technique [0002] Japanese Patent Laid-Open Publication No. 1-238962 discloses a light-emitting element array, in which a plurality of light-emitting elements that can control the threshold voltage or threshold current from the outside are arranged in one-dimensional, two-dimensional or three-dimensional, and each light-emitting element is controlled The electrodes for the threshold voltage or threshold current are electrically connected to each other by electrical devices, and clock lines for applying voltage or current from the outside are connected to each light emitting element. [0003] Japanese Patent Application Laid-Open No. 2009-286048 discloses a self-scanning light source head, which includes a substrate, surface-emitting semiconductor lasers arranged in an array on the substrate, arranged on the substrate, and used as the A thyristor is a switching element that selectively turns on / of...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/153
CPCH01L31/1113H01L31/125H03K17/79
Inventor 近藤崇
Owner FUJIFILM BUSINESS INNOVATION CORP
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