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Preparation method of a micro-nano cantilever arm structure elastic contactor

An elastic contact, cantilever arm technology, applied in the field of micro-electromechanical, can solve the problems of large surface roughness of the hemispherical boss, unfavorable demoulding, difficult process control, etc., to overcome the low processing efficiency, high processing efficiency and improve processing efficiency. Effect

Active Publication Date: 2019-09-27
河南明华智能系统研究院有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The disadvantage is that the process of etching cylindrical steps into hemispherical bosses is difficult to control, and the surface roughness of the hemispherical bosses is large, which is not conducive to demoulding

Method used

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  • Preparation method of a micro-nano cantilever arm structure elastic contactor
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  • Preparation method of a micro-nano cantilever arm structure elastic contactor

Examples

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Embodiment 1

[0036] A method for preparing a micro-nano cantilever arm structure elastic contactor, the specific steps are as follows:

[0037] (1) Photolithography: transfer the pattern of the mask to the Si substrate by photolithography;

[0038] (2) Etching: using an etching machine to etch a hemispherical silicon groove on the Si substrate;

[0039] (3) Coating: Hollow coating in a semicircular silicon tank, the coating material is copper alloy;

[0040] (4) Brazing: Braze the hollow coating on another material substrate; the material substrate can be a PCB circuit board, or a high-insulation quartz SiO 2 chip;

[0041] (5) Removing the Si matrix: the Si matrix is ​​removed by physical or chemical methods to obtain the elastic contactor.

[0042] In step (1), use a chemical film layer photoresist mask, adopt a thick glue process, coat a 7-10 μm thick photoresist on the upper surface of the Si substrate, and then prepare a mask by irradiating strong light on the photoresist. film gr...

Embodiment 2

[0060] A method for preparing a micro-nano cantilever arm structure elastic contactor, the specific steps are as follows:

[0061] (1) Photolithography: Use photolithography to transfer the pattern of the mask to the Si substrate; specifically: a. Coating: first coat the photoresist on the Si substrate, and then use the photoresist to smear the photoresist Uniform; set the initial speed of the homogenizer to 400r / min, time 6s; normal speed 1000r / min, time 10s, photoresist thickness is 7μm; b. Film hardening treatment, set the temperature at 100°C, and the time is 200s; c. Exposure: Expose with a photolithography machine, and the exposure illumination is 10W / cm 2 , the exposure time is 20s; d. Development: develop with 1:6 (original developer: water), and the development time is 60s.

[0062] (2) Etching: use an etching machine to etch a hemispherical silicon groove on the Si substrate; specifically: use SF 6 The etching gas is used to etch the Si substrate in the ICP high-de...

Embodiment 3

[0068] A method for preparing a micro-nano cantilever arm structure elastic contactor, the specific steps are as follows:

[0069] (1) Photolithography: Use photolithography to transfer the pattern of the mask to the Si substrate; specifically: a. Coating: first coat the photoresist on the Si substrate, and then use the photoresist to smear the photoresist Uniform; set the initial speed of the homogenizer to 500r / min, time 7s; normal speed 1500r / min, time 12s, photoresist thickness is 8μm; b. Film hardening treatment, set the temperature at 110°C, and the time is 250s; c. Exposure: Expose with a photolithography machine, and the exposure illumination is 12W / cm 2 , the exposure time is 25s; d. Development: develop with 1:6 (original developer: water), and the development time is 60s.

[0070] (2) Etching: use an etching machine to etch a hemispherical silicon groove on the Si substrate; specifically: use SF 6 The etching gas is used to etch the Si substrate in the ICP high-de...

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Abstract

The invention discloses a preparation method of a micro-nano suspension beam arm-structured elastic contactor. The preparation method specifically comprises the following steps of (1) photoetching: adopting a photoetching process to transfer a mask pattern to a Si substrate; (2) etching: etching a semispherical silicon groove in the Si substrate by an etching machine; (3) film coating: forming a hollow-out coated film in the semispherical silicon groove, wherein the film coating material is copper alloy; (4) brazing: brazing the hollow-out coated film on the other material substrate; and (5) removal of the Si substrate: removing the Si substrate by adopting a physical method or a chemical method to obtain the elastic contactor. The preparation method of the elastic sheet or the elastic contactor provided by the invention is simple in process, and adopts dry etching and film coating, so that environment pollution can be almost avoided, and the shortcoming of environment pollution causedby an electroplating process or a chemical corrosion process can be overcome; and in addition, by virtue of the preparation method, high processing efficiency is achieved, and dimensions and processing precision can be ensured.

Description

technical field [0001] The invention belongs to the field of micro-electromechanical technology, and in particular relates to a method for preparing an elastic contactor with a micro-nano cantilever arm structure. Background technique [0002] As MEMS is widely used in various industries, the reliability of MEMS contact performance has been paid more and more attention by people, and many problems have arisen in the conductivity, elasticity and service life of separable elastic contactors. Other micro-nano-spring devices such as nano-springs, pogo pins, and micro-spring sheets have been prepared, and they can realize two micro-nano devices, or produce elastic connections between chips and substrates. However, no general-purpose elastic contact device can meet all design performance requirements, and even on a specific application component, some elastic contactors cannot meet the performance requirements for use. [0003] In industrial production, 3D printing technology and...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01R13/24H01R43/16B81C3/00B81B7/02
Inventor 王云飞高志廷孔一君倪增磊喻恵武高志超王建雨
Owner 河南明华智能系统研究院有限公司
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