Preparation method for silver-doped graphene quantum dots
A technology of graphene quantum dots and silver doping, applied in graphene, chemical instruments and methods, nanotechnology, etc., can solve the problems of low fluorescence quantum yield and few active sites, and achieve good water solubility and low cost Inexpensive, no safety hazard effect
Inactive Publication Date: 2018-01-12
YUNNAN NORMAL UNIV
View PDF5 Cites 7 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
However, its shortcomings such as low fluorescence quantum yield and relatively few active sites limit its practical application to a certain extent, and the use of heteroatom doped graphene quantum dots can solve these problems to a certain extent.
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment 1
[0017] Example 1: Weigh 0.5 g of sucrose and 0.2 g of silver acetate, and add 40 ml of deionized water to fully dissolve the reactants. The prepared reaction solution was transferred to a hydrothermal reaction kettle, and placed in an oven at 170° C. for constant temperature heating for 4 hours. After the reaction, the solution is taken out, and the sample is purified by dialysis with a dialysis bag for 15 to 20 minutes. The environment outside the dialysis bag is deionized water, and finally the potassium-doped graphene quantum dot solution is collected.
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention relates to a preparation method for metallic element-doped graphene quantum dots, specifically to a hydro-thermal preparation method for silver-doped graphene quantum dots, belonging tothe technical field of nano-materials. The hydro-thermal preparation method for the silver-doped graphene quantum dots is characterized in that sugar and silver acetate produce the water-soluble metalsilver-doped graphene quantum dots under hydrothermal reaction conditions. According to the invention, metal silver ions are introduced into graphene quantum dots, and the energy level structure of the graphene quantum dots is adjusted so as to all the graphene quantum dots to have more excellent photoelectric performance. The preparation method is simple in process, low in cost for raw materials, simple in equipment and beneficial for large-scale production of enterprises; and the prepared quantum dots have good water-solubility, substantial fluorescence properties, and important applicationvalue in fields like photocatalysis, photoelectrons, solar cells and chemical sensing.
Description
technical field [0001] The invention relates to a method for preparing metal silver-doped graphene quantum dots. By adding doping element silver to the graphene quantum dots, a new energy level structure is introduced into the graphene forbidden band, and the band of the graphene quantum dots is realized. Gap adjustable. The invention belongs to the technical field of nanometer material preparation. The preparation process of the invention is simple, safe and low in cost, and the product has the advantages of good water solubility, remarkable fluorescence performance, uniform size and the like. Background technique [0002] In recent years, graphene, as a hotspot in the field of material research, has been favored by researchers. As a member of the graphene family, graphene quantum dots not only have the excellent properties of graphene, but also exhibit a series of new characteristics due to quantum confinement effects, surface effects, and dielectric confinement effects,...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/184B82Y40/00C09K11/65
Inventor 李学铭唐利斌钱福丽杨培志马逊
Owner YUNNAN NORMAL UNIV