Automatic square resistance measuring equipment

Abstract

The invention relates to automatic square resistance measuring equipment. A flower basket filled with silicon wafers is controlled to be conveyed to a discharging region from a feeding region througha control part, the silicon wafers inside the flower basket are discharged one by one and conveyed to a first cache region in the discharging region, the silicon wafers are conveyed to a correction region in the first cache region, the silicon wafers are conveyed to a test region after being corrected to carry out square resistance testing in the correction region, the silicon wafers after squareresistance testing are conveyed to a second cache region, through the control of the control part, after setting standard comparison and splitting in a splitting region, the silicon wafers exceeding set standard upper limit and exceeding set standard lower limit are separated out, the silicon wafers of which the square resistance testing result is in a normal range are conveyed to the feeding region, the silicon wafers are placed onto the flower basket through the feeding region, and finally the flower basket filled with the silicon wafers is conveyed out through the discharging region. The problems of pollution, fragmenting and scratching caused by manual wafer taking and wafer testing are effectively avoided; and the square resistance of the silicon wafers is automatically tested, so that the testing efficiency is greatly improved, and bath inspection can be completed.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to an automatic square resistance measuring device. Background technique [0002] At present, in the field of solar cells, the production of P-N junctions, that is, diffusion is the core of solar cell technology. The diffusion process reacts with phosphorus sources at high temperatures in the furnace tube to generate phosphorus on the surface of silicon wafers, and replaces silicon atoms through high temperature. Inside the silicon crystal, an N-type semiconductor is formed, which forms a PN junction with the previous P-type silicon chip contact area. Among them, judging whether the diffusion is good or not is reflected by testing the square resistance of the silicon wafer surface. The current test equipment needs to manually take, measure and put the slices. Not only is the efficiency low, but friction, damage, and pollution are unavoidable during the period; and the current ...

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Problems solved by technology

[0003] The technical problem to be solved by the present invention is: in order to overcome the test equipment in the prior art all need manually to take slice, test slice and put slice

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