A method for improving luminescence performance by self-ion implantation of Si into silicon-based materials

A silicon-based material and ion implantation technology, which is applied in the manufacture of electrical components, circuits, semiconductors/solid-state devices, etc., can solve the problems that can only be observed at low temperature, low fluorescence annihilation rate, and no public reports
CN107611023BInactive Publication Date: 2019-10-25YUNNAN UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
YUNNAN UNIV
Publication Date
2019-10-25
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention provides a method for improving light emitting performance by automatically injecting Si ions to a silicon-based material. Based on an ion injection and annealing technology, 3-5 times of Si automatic ion injection of different energy is performed on a silicon thin film of the silicon-based material which refers to an Si substrate or an SOI substrate with the cleaned surface; and next, different parameters of the conventional annealing or quick thermal annealing can be adjusted to obtain the silicon-based light emitting material with excellent light emitting performance. The method has the core that the ion injection technology is adopted, and Si automatic ion injection is performed at the same dosage in an energy gradual decreasing mode, so that ion injection active layer thickness is improved, and the silicon-based light emitting material with high light emitting efficiency, low fluorescence annihilating speed and high temperature stability is achieved.
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Description

technical field

[0001] The invention relates to a method for improving luminous performance by implanting Si ions into silicon-based materials, and belongs to the field of preparation of silicon-based luminescent materials. Background technique

[0002] Due to its indirect bandgap properties, the radiative recombination luminescence of silicon-based materials usually needs to be assisted by phonons, which has caused it to stagnate in the field of optoelectronic integration. At present, in order to improve the luminescent properties of silicon-based materials, the way of modifying their luminescence by defect engineering has become a major focus of research in the field of materials science. Defect engineering is represented by ion implantation. Defects are introduced into crystal Si through ion implantation. Different types of defects and clusters can form impurity (or defect) sub-levels with different positions and widths in the forbidden band, so that the electrons in the ...

Claims

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