A Calibration Method of Mos Capacitance CV Characteristic Curve in tcad Simulation

Abstract

The invention discloses a method for calibrating the CV characteristic curve of an MOS capacitor in TCAD simulation, which includes the following steps: building and running a TCAD process simulationprogram to get a simulation device structure of an MOS capacitor; carrying out actual tape-out to get an MOS capacitor device of corresponding size; testing the MOS capacitor device, obtaining an actual MOS capacitor CV characteristic curve, and calculating the gate oxide thickness fitting value and the actual channel doping concentration; calibrating the gate oxide thickness and the channel doping concentration in TCAD simulation according to the gate oxide thickness fitting value and the actual channel doping concentration to get an MOS capacitor CV characteristic curve in TCAD simulation; comparing the MOS capacitor CV characteristic curve in TCAD simulation with the actual test result, and adjusting the CV characteristic curve according to the actual test result to get the fast surfacestate distribution in the forbidden band of silicon; and adjusting the fixed charge on the interface of silicon and silicon dioxide to adjust the threshold voltage in TCAD simulation. The TCAD simulation result can give a reoccurrence of the measurement result of the CV characteristic curve of the MOS capacitor.

Description

technical field [0001] The invention relates to the technical field of TCAD simulation of semiconductor devices, and more particularly, relates to a method for calibrating a CV characteristic curve of a MOS capacitor in TCAD simulation. Background technique [0002] The computer-aided design (TCAD) of integrated circuit technology and devices is an important part of integrated circuit device design and virtual manufacturing, and has become a powerful tool for rapid analysis of integrated circuit technology and device characteristics. [0003] TCAD mainly includes process simulation and device simulation. Among them, the process simulation mainly uses the actual process flow to obtain the device structure, impurity distribution, junction depth, etc.; the device simulation mainly uses the device physical model and corresponding test conditions to simulate the device characteristic parameters and curves on the device structure. [0004] The application of TCAD can shorten the ...

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Problems solved by technology

[0007] Usually, to calibrate the CV characteristic curve of MOS capacitance, the impurity distribution curve of the well region under the gate region needs to be obtained through secondary ion mass spectrometry (SIMS), and the fast surface between the substrate silicon and the gate oxide silicon dioxide needs to be obtained by current pumping and other methods. State (Fast Surface State) distribution, the test steps are cumbersome, time-consuming and costly

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