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Sputtering target assembly

A sputtering target and assembly technology, which is applied in sputtering coating, metal material coating process, semiconductor/solid-state device manufacturing, etc., and can solve problems such as difficulty in large-scale

Inactive Publication Date: 2018-01-26
KOBELCO RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Depending on the sputtering target components, it may be difficult to increase the size

Method used

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Examples

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Embodiment

[0088] Hereinafter, the present invention is described in more detail by enumerating the examples, but the present invention is not limited by the following examples, and can also be modified and implemented within the scope of meeting the stated and hereinafter-described gist, and these changes are all included in the present invention within the technical range.

[0089] In this embodiment, the case where there is a coating (electroless Ni-P plating film, electrolytic Ni plating film, or Cr plating film) in the gap portion 10 between adjacent mounting parts 2a, and the case where there is no coating The influence of the state of the layer on the properties of the oxide semiconductor thin film was investigated.

[0090] make Figure 3A and Figure 3B A base plate 2 made of pure Cu is shown with gaps 10 . More specifically, the bottom plate 2 has a diameter of 126 mm and a thickness of 7 mm (thickness of the portion having the mounting portion 2 a ), and the width of the ga...

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Abstract

Provided is a sputtering target assembly that includes a plurality of mounting sections which are disposed on a backing plate, which are disposed with a gap therebetween, and on each of which one or more sputtering target members are disposed via a bonding material. The sputtering target assembly has a Ni base material coating in gaps between the adjacent mounting sections.

Description

technical field [0001] For example, the present invention relates to a sputtering target assembly used when forming an oxide thin film by a sputtering method, and the oxide thin film can be used as a display such as a liquid crystal display and an organic electroluminescence (EL) display. Semiconductor layer (active layer) of thin film transistors (Thin Film Transistor, TFT) used in devices and the like. More specifically, the present invention relates to a sputtering target assembly including a plurality of sputtering target members arranged on a backing plate via a bonding material. Background technique [0002] The amorphous oxide thin film (hereinafter sometimes referred to as oxide semiconductor thin film) used in the semiconductor layer of TFT has higher carrier mobility and optical bandgap than general-purpose amorphous silicon (a-Si). It is large and can be formed into a film at low temperature, so it is expected to be applied to next-generation displays that requir...

Claims

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Application Information

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IPC IPC(8): C23C14/34H01L21/203
CPCC23C14/34H01L21/02631H01L21/02565H01L21/02554C23C14/3407C23C14/3414H01J37/3423C25D3/12C25D3/562C23C18/32C23C18/50
Inventor 高木胜寿金丸守贺广瀬研太岩崎祐纪
Owner KOBELCO RES INST
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