Laser annealing device and method

A technology of laser annealing and laser irradiation, which is used in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of uneven temperature distribution and annealing effect on the surface of silicon wafers, ensure the uniformity of annealing temperature, and improve the annealing effect. Uniformity, yield-enhancing effect

Active Publication Date: 2018-02-06
SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD
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  • Application Information

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Problems solved by technology

[0007] The invention provides a laser annealing device and method to solve the problem of uneven temperature distribution and annealing effect on the surface of silicon wafers existing in the prior art

Method used

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  • Laser annealing device and method
  • Laser annealing device and method
  • Laser annealing device and method

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Embodiment 1

[0052] Such as image 3 As shown, the present invention provides a laser annealing device, including a laser irradiation system 1, a slide system 2, and a reflected light detection system 3 arranged sequentially along the optical path, as well as the laser irradiation system 1, the slide system 2, and the reflected light detection system. The host 4 connected to the detection system 3; the laser irradiation system 1 includes a laser light source 11, a beam adjustment component 12, a light intensity distribution forming component 13, a beam splitting component 14 and a focusing component 15 arranged sequentially along the optical path;

[0053] The laser light emitted by the laser light source 11 sequentially passes through the beam adjustment component 12, the light intensity distribution forming component 13, the beam splitting component 14 and the focusing component 15, and then projects onto the silicon wafer 5 of the slide system 2, and the reflected beam sequentially Afte...

Embodiment 2

[0069] The difference from Embodiment 1 is that in this embodiment, the light intensity distribution forming assembly 13 includes a turntable 131 and a number of transmittance compensation plates or a number of mask plates (that is, mask plates with A specific transmission pattern, so that the light beam irradiated on the mask passes through the mask plate according to the specific transmission pattern to form a corresponding light intensity distribution). Specifically, the transmittance compensation plate or mask plate is customized according to the surface topography of the actual annealed silicon wafer 5, that is, the surface of the silicon wafer 5 is irradiated with a uniform laser beam, and the energy of the reflected beam detected by the reflected light detection system 3 Distributed calculation of the reflectance of the surface of the silicon wafer 5, thereby obtaining the absorptivity of the surface of the silicon wafer 5, and calculating the light intensity distributio...

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Abstract

The present invention discloses a laser annealing device and method. The device comprises a laser radiation system, a wafer carrying system and a reflection light detection system which are arranged in order along an optical path, and a host connected with the laser radiation system, the wafer carrying system and the reflection light detection system. The laser radiation system comprises a laser light source, a light beam regulation module, a light intensity distribution formation module, a beam splitting module and a focusing module which are arranged in order along the optical path; and optical elements on the light intensity distribution formation module are selected to form incident light intensity distribution required by a silicon wafer to allow a temperature field on the silicon wafer to achieve an effect of consistent temperature of a middle portion and an edge of the temperature field so as to ensure uniformity of an annealing temperature and improve uniformity of an annealingeffect. Since patterns at the same position are the same for the same batch of silicon wafers, optical elements used in an annealing process can be selected offline in advance, and the selected optical elements are written into an exposure flow according to a sequence; and monitoring is only performed in the exposure process, and the exposure process does not need regulation so as to improve efficiency and improve a productivity while ensuring an annealing performance.

Description

technical field [0001] The invention relates to the technical field of laser annealing, in particular to a laser annealing device and method. Background technique [0002] Driven by Moore's Law, the chip manufacturing industry has experienced rapid development in the past few decades. This continued rapid development stems from the continued shrinking of chip sizes. However, as the size shrinks, more and more difficulties and challenges are raised for the chip manufacturing process, and the traditional rapid thermal annealing method of silicon wafers has been difficult to meet the requirements of 45nm and higher nodes. [0003] In recent years, due to the development of laser application technology and the advantages of smaller thermal budget and higher activation efficiency compared with traditional annealing, laser annealing can greatly reduce thermal diffusion and reduce thermal strain, and has shown a good application prospect. [0004] After the silicon wafer undergoe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/324H01L21/67
CPCH01L21/324H01L21/67098
Inventor 徐建旭崔国栋兰艳平
Owner SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD
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