Graphene transfer and doping method

A graphene and dopant technology, applied in the field of graphene, can solve the problems of poor adhesion, unstable doping, and inability to achieve large-scale and high-quality graphene transfer, and achieves good adhesion and is not easy to fall off. , to avoid the effect of damage to the structure

Inactive Publication Date: 2018-02-09
XIFENG 2D FUJIAN MATERIAL TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In view of the above problems, the present invention provides a graphene transfer and doping method, which solves the problem that existing graphene transfer and doping

Method used

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  • Graphene transfer and doping method

Examples

Experimental program
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Example Embodiment

[0023] Example 1

[0024] Graphene is deposited on the copper sheet by chemical vapor deposition, and graphene is grown on both sides of the copper sheet; a silicone adhesive film is attached to the graphene on one side of the copper sheet to ensure the flatness of the copper sheet, which is beneficial to the subsequent target substrate and adhesive layer. Fitting; FeCl 3 Mix the mixture with viscosity modifier, light curing agent and hydroxyethyl alkenoate in a mass ratio of 1:10, and ultrasonicate for 20 minutes at room temperature to make it fully and evenly mixed; apply a 25um thick ultrasonic mixture on the 200um target substrate ; The target substrate coated with the adhesive layer and the graphene on the other side of the copper sheet are bonded; with a 500wUV light source, the target substrate surface is irradiated with the adhesive layer for 3min, so that the adhesive layer is completely cured;

[0025]The electrolyte was prepared, wherein the concentration of NaOH w...

Example Embodiment

[0027] Example 2

[0028] like figure 1 Graphene is grown on one side 11 of the substrate; the side 12-2 on which the graphene is grown is attached to the transition base 13; the glue layer 14 with dopant is coated on the target base 15; the growth graphite The other side 12-1 of the substrate is attached to the target substrate 15 coated with the dopant glue layer 14; the dopant and glue are mixed in a weight ratio of 1:10-1:30; at room temperature Ultrasonic for 20-30min under the condition of fully dissolving the dopant and glue; coating the target substrate 15 with a uniform thickness of 5-50μm in the dopant and the glue-dissolved liquid; exposing the target substrate 15 under the ultraviolet light of 500-1000W Irradiate for 1 to 3 minutes; cure the adhesive layer 14 with a UV light source; completely peel off the substrate 11 from the graphene by a bubble peeling method, and obtain the target substrate 15 with the adhesive layer 14 and the graphene, the substrate 11, and...

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Abstract

The present invention discloses a graphene transfer and doping method, which comprises: growing graphene on both surfaces of a substrate; adhering one graphene growing surface of the substrate to a transition substrate; coating a target substrate with a glue layer having a doped material; adhering the other graphene growing surface of the substrate to the target substrate coated with the glue layer; curing the glue layer; completely peeling the substrate from the graphene; adhering the graphene growing on the target substrate to the graphene growing on the transition substrate, and removing the transition substrate; and transferring the multiple graphene layers on the target substrate. According to the present invention, with the graphene transfer and doping method, the transfer of the large-sized and high-quality graphene can be achieved while the transfer and the doping are simultaneously performed without the additional doping, the graphene has advantages of uniform doping distribution and good stability, and the target substrate has good adhesion when the multi-layer graphene is transferred.

Description

technical field [0001] The invention relates to the field of graphene, in particular to a graphene transfer and doping method. Background technique [0002] Graphene is a material in which carbon atoms are bonded in a hexagonal network. It has many excellent electrical and mechanical properties and is expected to be used in high-speed transistors, touch panels, and transparent conductive films for solar cells. Since its discovery in 2004, graphene has been a frontier research hotspot. Among all its potential applications, transparent conductive films are the closest to practical applications, and can be used as substitute materials for transparent conductive films that are currently commonly used in touch panels, flexible liquid crystal panels, and organic light-emitting diodes. The reason why transparent conductive films are expected to be used is that graphene has high carrier mobility, thin thickness, and high transparency. However, the application of graphene as a tran...

Claims

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Application Information

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IPC IPC(8): C01B32/184
Inventor 杨与畅
Owner XIFENG 2D FUJIAN MATERIAL TECH CO LTD
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