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Graphene transfer and doping method

A graphene and dopant technology, applied in the field of graphene, can solve the problems of poor adhesion, unstable doping, and inability to achieve large-scale and high-quality graphene transfer, and achieves good adhesion and is not easy to fall off. , to avoid the effect of damage to the structure

Inactive Publication Date: 2018-02-09
XIFENG 2D FUJIAN MATERIAL TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In view of the above problems, the present invention provides a graphene transfer and doping method, which solves the problem that existing graphene transfer and doping cannot realize large-scale and high-quality graphene transfer, unstable doping, and when transferring multi-layer graphene. Disadvantages of poor adhesion to target substrates

Method used

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Embodiment 1

[0024] Graphene is deposited on the copper sheet by chemical vapor deposition. Graphene grows on both sides of the copper sheet; a silicone adhesive film is attached to the graphene on one side of the copper sheet to ensure the flatness of the copper sheet, which is beneficial to the subsequent target substrate and adhesive layer. fit; the FeCl 3 Mix with viscosity regulator, photocuring agent, and hydroxyethyl enoate mixture at a mass ratio of 1:10, and ultrasonically 20min at room temperature to make it fully and uniformly mixed; coat a 25um thick ultrasonic mixture on a 200um target substrate ; Lay the target substrate coated with the adhesive layer with the graphene on the other side of the copper sheet; use a 500w UV light source to irradiate the adhesive layer on the target substrate surface for 3 minutes, so that the adhesive layer is completely cured;

[0025]The electrolyte is prepared, wherein the concentration of NaOH is 2M, and the concentration of CTAB (cetyltrime...

Embodiment 2

[0028] Such as figure 1 Graphene is grown on one side 11 of the substrate; the side 12-2 with the graphene grown on the substrate is attached to the transition substrate 13; on the target substrate 15, the adhesive layer 14 with doping is coated; graphite will be grown The other side 12-1 of the substrate is attached to the target substrate 15 coated with the dopant glue layer 14; the dopant and the glue are mixed according to the weight ratio of 1:10 to 1:30; at room temperature Ultrasound for 20-30 minutes under the condition to fully dissolve the dopant and glue; coat the target substrate 15 with a uniform thickness of 5-50 μm and the dissolved liquid of the dopant and glue; put the target substrate 15 under 500-1000W ultraviolet light Irradiate for 1-3 minutes; cure the adhesive layer 14 with a UV light source; completely peel off the substrate 11 and graphene by the bubble stripping method, and obtain the target substrate 15, substrate 11, and graphene-attached adhesive l...

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Abstract

The present invention discloses a graphene transfer and doping method, which comprises: growing graphene on both surfaces of a substrate; adhering one graphene growing surface of the substrate to a transition substrate; coating a target substrate with a glue layer having a doped material; adhering the other graphene growing surface of the substrate to the target substrate coated with the glue layer; curing the glue layer; completely peeling the substrate from the graphene; adhering the graphene growing on the target substrate to the graphene growing on the transition substrate, and removing the transition substrate; and transferring the multiple graphene layers on the target substrate. According to the present invention, with the graphene transfer and doping method, the transfer of the large-sized and high-quality graphene can be achieved while the transfer and the doping are simultaneously performed without the additional doping, the graphene has advantages of uniform doping distribution and good stability, and the target substrate has good adhesion when the multi-layer graphene is transferred.

Description

technical field [0001] The invention relates to the field of graphene, in particular to a graphene transfer and doping method. Background technique [0002] Graphene is a material in which carbon atoms are bonded in a hexagonal network. It has many excellent electrical and mechanical properties and is expected to be used in high-speed transistors, touch panels, and transparent conductive films for solar cells. Since its discovery in 2004, graphene has been a frontier research hotspot. Among all its potential applications, transparent conductive films are the closest to practical applications, and can be used as substitute materials for transparent conductive films that are currently commonly used in touch panels, flexible liquid crystal panels, and organic light-emitting diodes. The reason why transparent conductive films are expected to be used is that graphene has high carrier mobility, thin thickness, and high transparency. However, the application of graphene as a tran...

Claims

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Application Information

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IPC IPC(8): C01B32/184
Inventor 杨与畅
Owner XIFENG 2D FUJIAN MATERIAL TECH CO LTD
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