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Etching method

A dry etching, vacuum chamber technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of cumbersome process operation steps and increase the difficulty of operation.

Inactive Publication Date: 2018-02-16
TRULY HUIZHOU SMART DISPLAY
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0006] However, both the first and second methods need to add additional operating chambers and water washing devices, which will increase the difficulty of operation and make the process operation steps more cumbersome

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Embodiment Construction

[0024] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. However, the present invention can be implemented in many other ways different from those described here, and those skilled in the art can make similar improvements without departing from the connotation of the present invention, so the present invention is not limited by the specific implementations disclosed below.

[0025] Such as figure 1 As shown, the etching method in one embodiment of the present invention includes the following steps:

[0026] S110: In the vacuum chamber, for Cl 2 and BCl 3 The mixed gas is ionized for the first time to form a first plasma, and the source and drain electr...

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Abstract

An etching method comprises the steps of performing a first ionization operation on a mixed gas of Cl2 and BCl3 in a vacuum chamber to form a first plasma, and performing a dry etching operation on asource and a drain by using the first plasma; and performing a second ionization operation on C4F8 in the vacuum chamber to form a second plasma, and performing a repairing operation on the source anddrain by using the second plasma. In the above etching method, the main etching step and the repairing operation are performed in the same chamber without adding extra operating chamber or water washing device, so that the overall process operation is not difficult. Further, since C4F8 belongs to a compound with a relatively large molecular weight, the metal sidewall after the main etching can bewell protected during the repairing operation, and at the same time, the metal sidewall can be repaired and protected to some extent.

Description

technical field [0001] The invention relates to the technical field of AMOLED manufacturing, in particular to an etching method. Background technique [0002] In the process of using LTPS (low temperature polysilicon technology) to make display screens, the Ti / Al / Ti (titanium / aluminum / titanium) composite film layer is usually carried out by dry etching (Dry Etching), and Dry Etching for Ti / Al / When the Ti film is etched, the etching gas usually used is chlorine (Cl2), and Cl2 is easy to corrode the aluminum (Al) film in the Ti / Al / Ti film. Once the Al film corrodes, It will have a great impact on TFT characteristics, on-resistance, and contact resistance. Therefore, how to effectively avoid Al film corrosion has become a key concern in the industry. [0003] In the industry, there are two main methods to prevent aluminum (Al) film corrosion: [0004] 1. O 2 +H 2 O: O2 and H2O are ionized into Plasma (plasma) in the process chamber, and H in Plasma combines with residual C...

Claims

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Application Information

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IPC IPC(8): H01L21/3213
CPCH01L21/32136H01L21/32138
Inventor 张朋宾卢朋祝汉泉苏君海李建华
Owner TRULY HUIZHOU SMART DISPLAY
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