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A power chip packaging method and structure

A technology of power chips and packaging methods, applied in the direction of semiconductor/solid-state device parts, semiconductor devices, electrical components, etc., can solve the problems of IGBT device assembly errors, meet the requirements of ensuring error accuracy, simplify the assembly process, and improve heat dissipation. Effect

Active Publication Date: 2020-08-25
GLOBAL ENERGY INTERCONNECTION RES INST CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Therefore, the technical problem to be solved by the present invention is that the packaging method of IGBT devices in the prior art is easy to introduce artificial assembly errors

Method used

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  • A power chip packaging method and structure
  • A power chip packaging method and structure
  • A power chip packaging method and structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] This embodiment provides a power chip packaging method, which is suitable for packaging power chips (such as IGBT chips), such as figure 1 As shown, the method includes the following steps:

[0036] S11: Place the first metal spacer 30, the power chip 20 and the second metal spacer 10 in the plastic sealing mold; specifically, as Figure 2A As shown, first the lower gasket (i.e. the first metal gasket 30), the chip (i.e. the power chip 20) and the upper gasket (i.e. the second metal gasket 10) are put into the plastic packaging mold (including the upper and lower plastic packaging molds) in sequence. ), the plastic encapsulation mold is matched with the chip, and in practical application, it can be changed according to the change of the chip and the upper and lower pads, so as to be suitable for various chip packages.

[0037]S12: Heat up the plastic sealing material to turn it into a liquid state; the plastic sealing material is generally in a solid state at room temp...

Embodiment 2

[0049] This embodiment provides a power chip packaging structure, such as image 3 As shown, it includes: a first cover plate 3, a boss is arranged on the first cover plate 3; a power chip sub-module 1, including a plastic package 50 and a first metal gasket 30 arranged in the plastic package 50, a power chip 20 and the second metal gasket 10, the power chip sub-module 1 is set on the boss of the first cover 3; the second cover 2, the second cover 2 is set on the power chip sub-module 1. The traditional silver sheet and insulating frame are omitted, the contact thermal resistance between various components is reduced, and the heat dissipation of the device is improved. Due to the adoption of the plastic encapsulation process, the silver sheet and the insulating frame are omitted, the production process is reduced, the production efficiency is greatly improved, and the production cost of the device is reduced.

[0050] As a preferred solution, when the power chip 20 is an IGBT...

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Abstract

The invention provides a power chip packaging method and a power chip packaging structure. The power chip packaging method comprises the steps of: placing a first metal gasket, a power chip and a second metal gasket in a plastic packaging mould; heating a plastic packaging material into a liquid state; pressurizing to inject the liquid-state plastic packaging material into the plastic packaging mould; and solidifying the liquid-state plastic packaging material in the plastic packaging mould, and removing the plastic packaging mould after forming a plastic packaging outer shell, thereby acquiring a plastic packaged power chip module. Through subjecting the first metal gasket, the power chip and the second metal gasket to plastic packaging in the plastic packaging mould, the power chip packaging method simplifies the assembling process, reduces errors caused by manual assembly, reduces the thermal contact resistance among components, improves the homogeneity during the sub-module assembling process, effectively ensures the requirement for error precision of large-scale chip parallel connection, improves the reliability of the device, omits the traditional silver plate and insulatingframe, reduces the production process, significantly improves the production efficiency and reduces the production cost of the device.

Description

technical field [0001] The invention relates to the field of packaging technology, in particular to a power chip packaging method and structure. Background technique [0002] Press-pack packaging is the latest packaging form of high-power IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) devices. Compared with traditional soldered IGBT (Soldered IGBT Module), press-pack IGBT (Press-pack IGBT) The thermodynamic and electrical connection is realized by using pressure, and double-sided heat dissipation is ensured. The crimp-type IGBT is considered to be an ideal device for high-power applications and applications with large fluctuations in output power, and can meet the requirements of high-voltage direct current transmission and new energy grid-connected switching devices. In addition, the reliability of the crimp-type IGBT is very high, and it can also meet the requirements of the power system for high reliability of power supply. [0003] At prese...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/56H01L21/331H01L21/67H01L21/60H01L23/31H01L23/492H01L29/739
CPCH01L21/56H01L21/67253H01L23/3185H01L23/492H01L24/83H01L29/66325H01L29/7393H01L2224/8384
Inventor 武伟韩荣刚林仲康石浩田丽纷张喆李现兵张朋
Owner GLOBAL ENERGY INTERCONNECTION RES INST CO LTD