Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Chemical doping agent efficiently doping graphene and doping method

A chemical doping and graphene technology, applied in the field of graphene, can solve the problems of high doping stability and difficulty in taking into account the doping effect, and achieve the effect of improving the doping effect and improving the doping stability

Inactive Publication Date: 2018-03-06
INST OF METAL RESEARCH - CHINESE ACAD OF SCI
View PDF2 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the existing chemical dopants are generally difficult to balance the excellent doping effect and high doping stability

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] In this embodiment, triarylsulfonium hexafluoroantimonate is used as a chemical dopant for efficiently doping graphene. Using the polymer polymethylmethacrylate (PMMA) as the transfer medium, CVD-grown single-layer graphene on copper foil was transferred to the surface of polyethylene terephthalate (PET). After immersing the graphene / PET in a carbonate solution of triarylsulfonium hexafluoroantimonate (concentration 5mM) for 1 minute, take it out and dry it to complete the doping. The surface resistance of graphene before doping is 576 ohms / square, and the average surface resistance after doping is 430 ohms / square.

Embodiment 2

[0020] The difference from Example 1 is:

[0021] In this embodiment, the graphene / PET is soaked in the carbonate solution of triarylsulfonium hexafluoroantimonate (concentration 50mM) for 1 minute, then taken out, and then illuminated by ultraviolet curing equipment, with a wavelength of 360nm and a time of 15 minutes. Power 100 watts, complete doping. The surface resistance of graphene before doping is 580 ohms / square, and the average surface resistance after doping is 211 ohms / square.

Embodiment 3

[0023] The difference from Example 1 is:

[0024] In this example, the graphene / PET was soaked in a carbonate solution of triarylsulfonium hexafluoroantimonate (concentration: 50 mM) for 1 minute, then taken out, and heated at 80° C. for 5 minutes to complete the doping. The surface resistance of graphene before doping is 550 ohms / square, and the average surface resistance after doping is 374 ohms / square.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to the field of graphene and particularly relates to a chemical doping agent efficiently doping graphene and a doping method. The doping agent is suitable for doping of differently layers of graphene on different matrixes. The chemical doping agent adopts a cationic photoinitiator or a precursor material which can generate the cationic photoinitiator; or the chemical doping agent adopts one or two or above combinations of cationic photoinitiator or the precursor material which can generate the cationic photoinitiator and other types of photoinitiators. After the chemicaldoping agent is in contact with the surface of the graphene, the graphene is doped, and the doping effect and the doping stability can be improved by irradiating or heating the cationic photoinitiator. Therefore, foundation is laid for application of the doped-state graphene in electronic and photoelectronic devices.

Description

Technical field: [0001] The invention relates to the field of graphene, in particular to a chemical dopant and a doping method for efficiently doping graphene. The dopant is suitable for doping graphene with different layers on different substrates. Background technique: [0002] Graphene is a new type of two-dimensional carbon material with a honeycomb structure composed of a single layer of carbon atoms. Graphene has excellent electrical conductivity, and its electrical conductivity is 1.6 times that of copper. Graphene has excellent transmittance to near-infrared, visible light and ultraviolet light, and the transmittance of single-layer graphene reaches 97.7%. The strength of graphene can reach 130GPa, more than 100 times that of steel, and it has excellent flexibility, thermal stability and chemical stability. Therefore, the application of graphene in electronic and optoelectronic devices can give full play to its structural and performance advantages, and has received...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C01B32/194
Inventor 马来鹏任文才董世超成会明
Owner INST OF METAL RESEARCH - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com