Method for preparing Ag electrode for testing BZT ceramic at low temperature

An electrode and ceramic technology, which is applied in the field of low-temperature preparation of Ag electrodes to test BZT ceramics, can solve problems such as the deterioration of dielectric properties of products, and achieve the effect of simple preparation process and good application prospects.

Inactive Publication Date: 2018-03-20
TIANJIN UNIV
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Problems solved by technology

[0004] The purpose of the present invention is to overcome the shortcoming of silver infiltration into the interior of ceramics caused by the silver test method in the prior art, resulting in the deterioration of the dielectric properties of the product. The present invention uses magnetron sputtering technology to provide a method for preparing Ag electrodes at low temperature to test BZT ceramics

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Embodiment Construction

[0019] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the examples. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0020] A kind of method of the present invention prepares Ag electrode to test BZT ceramics at low temperature, concrete steps are as follows:

[0021] 1. Prepare BZT ceramics by solid-state sintering method, and use an electronic balance to press BaZr 0.2 Ti 0.8 o 3 Weigh BaCO corresponding to the stoichiometric ratio 3 , ZrO 2 and TiO 2 , with a purity of 99%. After being fully mixed, it is pressed and formed into a disc green body. The green body is placed in a box-type electric furnace and gradually heated to 1350 ° C, and kept at a temperature of 6 hours to obtain a BZT ceramic disc product.

[0022] 2. Put the BZT...

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Abstract

The invention discloses a method for preparing an Ag electrode for testing BZT ceramic at low temperature. The method comprises the following steps: weighing the raw materials including BaCO3, ZrO2 and TiO2 according to a stoichiometric ratio of BaZr0.2Ti0.8O3, sintering at 1350 DEG C, so as to obtain the BZT ceramic; putting the BZT ceramic product into a magnetron sputtering product platform, loading a metal silver target material, carrying out vacuumizing until the base pressure P of a magnetron sputtering system is less than 1.0*10<3>Pa, carrying out deposition on the surface of a BZT ceramic product in a direct current sputtering current of 100mA-400mA for 1500s-7200s by taking Ar as sputtering gas so as to obtain an Ag electrode with a thickness of 1-4 microns, and polishing an Ag coating layer by virtue of abrasive paper, so as to obtain the Ag electrode for testing the BZT ceramic. The low-temperature preparation is realized without thermal treatment, the preparation process issimple, and the method has good application prospect.

Description

technical field [0001] The invention relates to electronic information materials and components, in particular to a method for preparing Ag electrodes at low temperature and testing BZT ceramics. Background technique [0002] In recent years, due to the rapid development of the microelectronics technology market, the requirements for integration, intelligence, miniaturization and miniaturization of practical devices such as ceramic capacitors and microwave dielectric components have been put forward. Research on dielectric ceramics has become more and more popular. widespread attention. Ferroelectric ceramics are a large class of functional materials with physical properties such as dielectric properties, piezoelectric effects, electrostrictive effects, and pyroelectric effects. They are widely used in high-tech fields such as information storage, piezoelectric energy conversion, and pyroelectric detection. Lead-containing ferroelectric ceramics have excellent properties, b...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/30C23C14/35C23C14/18
CPCG01N27/30C23C14/185C23C14/35
Inventor 李玲霞郑浩然于仕辉陈思亮孙正
Owner TIANJIN UNIV
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