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Evaluation method and device of single event upset (SEU)

A single-event flipping and evaluation device technology, which is applied in special data processing applications, instruments, electrical digital data processing, etc., can solve problems such as the inability to simulate and analyze single-event flipping effects

Inactive Publication Date: 2018-03-23
XIANGTAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0004] The embodiment of the present invention provides a method and device for evaluating single-event reversal, which is used to solve the problem that the single-event reversal effect cannot be simulated and analyzed in the prior art

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  • Evaluation method and device of single event upset (SEU)
  • Evaluation method and device of single event upset (SEU)
  • Evaluation method and device of single event upset (SEU)

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Embodiment Construction

[0035] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0036] It should be noted that the execution body of this embodiment of the present invention may be a processor.

[0037] figure 1 It is a schematic flowchart of a single event upset evaluation method provided by an embodiment of the present invention, wherein the SRAM includes a sensitive unit; the method includes the following steps:

[0038] S101: Establish a geometric model of the SRAM; the geometric model includes two layers, wherein the sensitive area ...

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Abstract

The invention provides an evaluation method and device of single event upset (SEU), and relates to the field of radiation hardening of semiconductor devices. The method and device are used for solvingthe problem that single event upset cannot be simulated and analyzed in the prior art. The method includes: establishing a geometric model of a static random access memory (SRAM), wherein the geometric model includes two layers, and a sensitive area is the second layer and is located below the first layer; irradiating the sensitive area of the geometric model through a monte carlo method according to preset parameters of incident particles to obtain deposited energy, wherein the preset parameters of the incident particles include the number of the incident particles and energy of the incidentparticles; and if the deposited energy reaches preset critical energy, determining that the incident particles cause one time of single event upset.

Description

technical field [0001] The invention relates to the field of anti-radiation hardening of semiconductor devices, in particular to a method and device for single-event flip evaluation. Background technique [0002] The single event upset effect (English: single event upset, abbreviation: SEU) refers to the generation of electron-hole pairs when a single particle passes through an electronic component. The collection of sensitive nodes of devices leads to changes in the logic state of electronic components. [0003] With the development of aerospace technology, more and more electronic components are used in various components of spacecraft. However, high-energy particles and various rays in the space environment will cause single event flipping effects in electronic components, which will cause changes in the logic state or stored data of electronic components, and even cause permanent failure of electronic components, seriously affecting spacecraft. service life. Therefore...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F17/50
CPCG06F30/20
Inventor 郭红霞张阳张凤祁郭维新钟向丽琚安安秦丽
Owner XIANGTAN UNIV
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