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Silicon/graphene composite negative electrode material, preparation method and applications thereof

A graphene composite and negative electrode material technology, applied in the field of electrochemical energy storage, can solve the problems of thickened interfacial film, increased impedance, complex mutual evolution relationship, etc.

Active Publication Date: 2018-03-27
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the modification route of the synthetic method, the relationship between the evolution of the product and the synthesis process is relatively complicated, the structure of the product is unpredictable, and the improvement of the cycle is not obvious, and the separation of silicon / graphene still exists during the cycle. This will undoubtedly lead to electrode pulverization accompanied by thickening of the interfacial film, increased impedance, increased battery polarization, and severe loss of capacity, etc.
[0006] In summary, although there are optional silicon / graphene composite negative electrode materials and their preparation methods in this field, the structural stability and cycle effect of the existing silicon / graphene composite negative electrode materials are still unsatisfactory.

Method used

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  • Silicon/graphene composite negative electrode material, preparation method and applications thereof
  • Silicon/graphene composite negative electrode material, preparation method and applications thereof
  • Silicon/graphene composite negative electrode material, preparation method and applications thereof

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preparation example Construction

[0075] The present invention also provides a method for preparing the silicon / graphene composite negative electrode material, comprising the steps of:

[0076] a) providing a precursor material comprising;

[0077] i) negative electrode active material, the negative electrode active material is a silicon / graphene doped host material;

[0078] ii) conductive agent; and

[0079] iii) a binder, which is a nitrogen-containing polymer;

[0080] b) pyrolyzing the precursor material to obtain the silicon / graphene composite negative electrode material.

[0081] In another preferred embodiment, the precursor material, the silicon / graphene-doped host material, the conductive agent and the nitrogen-containing polymer are as described above.

[0082] In another preferred example, the precursor material is prepared by a hydrothermal method.

[0083] Typically, the treatment temperature of the pyrolysis treatment is 250-1000°C; and / or

[0084] The treatment time of the pyrolysis treatm...

Embodiment 1

[0127] The preparation of embodiment 1 silicon / graphene composite negative electrode material 1

[0128] A, silicon and graphene are weighed by mass ratio 7:3, 0.35 gram silicon and 0.15 gram graphene are respectively dispersed in 25 milliliters of ethanols and stirred for 10-15 minutes;

[0129] b. Gradually drop the silicon dispersion into the stirring graphene dispersion, and continue stirring for 2 hours after the addition is completed;

[0130] c. Put the mixed stirring solution in a hydrothermal kettle with a volume of 100 ml and heat it to 180° C. and stay there for 18 hours;

[0131] d. Import the hydroheated product into a centrifuge tube and centrifuge at 8000 rpm for 10 minutes, place the obtained silicon / graphene-doped host material in a beaker, and dry it at 60°C;

[0132] e. Pre-dissolve polyacrylonitrile with a mass ratio of 10% in N-methylpyrrolidone (NMP) solvent, and mix and stir in a magnetic stirrer for 3 hours to obtain a uniform solution;

[0133] f. St...

Embodiment 2

[0141] Embodiment 2 Preparation of silicon / graphene composite negative electrode material 2

[0142] Repeat Example 1, the difference is: in step a, silicon and graphene are weighed in a mass ratio of 5:5.

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Abstract

The invention relates to a silicon / graphene composite negative electrode material, a preparation method and applications thereof, and specifically discloses a silicon / graphene composite negative electrode material, which is obtained by pyrolyzing a precursor material, wherein the precursor material comprises: i) a negative electrode active material, wherein the negative electrode active material is a silicon / graphene doped main body material; ii) an electric conduction agent; and iii) a binder, wherein the binder is a nitrogen-containing polymer. The invention further discloses a preparation method and applications of the silicon / graphene composite negative electrode material. The silicon / graphene composite negative electrode material of the present invention has good mechanical stability,wherein the silicon / graphene doped main body material can maintain the stable structure, the high electrode coulombic efficiency and the capacity holding rate in the long-acting cycle.

Description

technical field [0001] The invention relates to the field of electrochemical energy storage, in particular to a silicon / graphene composite negative electrode material and its preparation method and application. Background technique [0002] As the anode material with the highest theoretical capacity (4200 mAh / g), silicon has unlimited application prospects in the high energy density battery industry. However, it has a volume change of more than 300% during the cycle, resulting in the continuous occurrence of silicon particles. The interface passivation layer is damaged and repaired repeatedly and becomes thicker, which seriously aggravates the polarization phenomenon and capacity loss of the battery. [0003] Graphene has excellent mechanical stability and electrical conductivity, and it is a battery anode material itself and has a high capacity (600 mAh / g). [0004] Therefore, although the silicon / graphene composite material has a lower capacity than the pure silicon anode...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01M4/36H01M4/38H01M4/587H01M10/052H01M10/0525H01M12/08
CPCH01M4/364H01M4/386H01M4/587H01M10/052H01M10/0525H01M12/08Y02E60/10
Inventor 彭哲张政刚王德宇
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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