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Light emitting element

A technology of light-emitting elements and optical distances, applied in electrical components, laser parts, lasers, etc., can solve problems such as oxidation active layers, and achieve the effect of improving the degree of freedom of control and design.

Active Publication Date: 2020-03-03
SONY CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, in a surface-emitting laser element configured of a GaN-based compound semiconductor, it is difficult to oxidize the active layer from the outside (from the lateral direction) along the XY plane from the characteristics of the material

Method used

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Examples

Experimental program
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Effect test

example 1

[0104] Working Example 1 relates to the light-emitting element according to the first mode of the present disclosure, and particularly relates to the light-emitting element according to the 1-A mode of the present disclosure. More specifically, the light-emitting element of any one of Working Example 1 or Working Example 2 to Working Example 4 includes a surface-emitting laser element (vertical resonator Layer VCSEL).

[0105] figure 1 The light-emitting element of Working Example 1 or the light-emitting element of any one of Working Example 2 to Working Example 5, the schematic partial end view of which is described in , includes:

[0106] (A) stacked structure 20, wherein,

[0107] a first compound semiconductor layer 21 made of a GaN-based compound semiconductor having a first face 21a and a second face 21b opposite to the first face 21a,

[0108] an active layer (light emitting layer) 23 made of a GaN-based compound semiconductor and in contact with the second face 21b...

example 2

[0147] Working Example 2 is a modification of Working Example 1, and relates to the light-emitting element according to the 1-B mode of the present disclosure. like image 3 As shown in the schematic partial cross-sectional view of , in the light-emitting element of Working Example 2, the current non-injection inner region 52 and the current non-injection outer region 53 pass through the second surface of the second compound semiconductor layer 22 The plasma irradiation, the ashing process for the second surface of the second compound semiconductor layer 22 or the reactive ion etching process (RIE) for the second surface of the second compound semiconductor layer 22 are formed. Then, since the current non-injection inner region 52 and the current non-injection outer region 53 are exposed to plasma particles (in particular, argon, oxygen, nitrogen, etc.) deteriorates, and the current non-injection inner region 52 and the current non-injection outer region 53 are placed in a hi...

example 3

[0156] Working Example 3 is a modification of Working Examples 1 and 2, and relates to the light-emitting element according to the 1-C mode of the present disclosure. like Figure 4 As shown in the schematic partial cross-sectional view of , in the light-emitting element of Working Example 3, the second light reflection layer 42 has the function of directing the light from the first light reflection layer 41 The two light reflective layers 42 are configured as reflection or scattering areas outside the resonator structure (ie towards the mode loss action area 55 ). In particular, a portion of the second light reflection layer 42 located above the side wall of the mode loss action portion (mode loss action layer) 54 (above the side wall of the opening 54B) has a forward tapered inclined portion 42A or has a direction toward the first light. The region of the reflective layer 41 is projectively curved.

[0157] In Working Example 3, the shape of the boundary between the curren...

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Abstract

The light emitting element is provided with a layered structure (20) formed by layering a first compound semiconductor layer (21), an active layer (23) and a second compound semiconductor layer (22) made of a GaN-based compound semiconductor. a layered structure; a mode loss effective point (54) disposed on the second compound semiconductor layer (22) and forming a mode loss effective region (55) having an effect on an increase / decrease of an oscillation mode loss; The second electrode (32); the second light reflection layer (42); the first light reflection layer (41); and the first electrode (31). In the layered structure (20), a current injection region (51), a non-current injection inner region (52) surrounding the current injection region (51), and a non-current injection outer region surrounding the non-current injection inner region (52) are formed (53). The projected image of the mode loss active region (55) overlays the projected image of the non-current injected outer region (53).

Description

technical field [0001] The present disclosure relates to a light emitting element (particularly, a surface emitting laser element sometimes called a vertical resonator laser or VCSEL). Background technique [0002] Generally, in a light-emitting element configured by a surface-emitting laser element, laser oscillation occurs by resonating laser light between two light reflection layers (distributed Bragg reflection layers, ie, DBR layers). In a surface-emitting laser element having a stacked structure of an n-type GaN-based compound semiconductor, an active layer (light-emitting layer) configured of a GaN-based compound semiconductor, and a p-type GaN-based compound semiconductor, a layer composed of A second electrode made of a transparent conductive material, and a second light reflection layer configured by a stack structure of insulating materials is formed on the second electrode. In addition, a first electrode and a first light reflection layer configured of a stacked...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/183
CPCH01S5/18341H01S5/18369H01S5/18391H01S5/34333H01S5/18308H01S5/04252H01S5/04253H01S5/028H01S5/0421H01S5/2004
Inventor 滨口达史泉将一郎滝口由朗风田川统之
Owner SONY CORP
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