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Polishing method of organic-inorganic hybrid halide perovskite semiconductor crystal

A halide perovskite and semiconductor technology, applied in grinding/polishing equipment, grinding machine tools, machine tools suitable for grinding workpiece planes, etc., can solve the problems of poor practicability and achieve good practicability and good permeability , crystal surface smooth effect

Active Publication Date: 2019-11-05
NANJING GONGCHENG RES INST OF ENERGY CONSERVATION & NEW MATERIALS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In order to overcome the shortcomings of poor practicability of existing semiconductor crystal polishing methods, the present invention provides a polishing method for organic-inorganic hybrid halide perovskite semiconductor crystals

Method used

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  • Polishing method of organic-inorganic hybrid halide perovskite semiconductor crystal
  • Polishing method of organic-inorganic hybrid halide perovskite semiconductor crystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0014] Embodiment 1: The rubber mat is spread on two polishing disks; The MAPbBr that grows from the solution method 3 Put the crystal on the first polishing disc, spray 1 ml of WD-40 polishing liquid on the rubber pad, draw the word "8" with your finger for grinding and polishing, polish both sides of the wafer for 600 seconds, and then rinse with isopropanol immediately; Put the crystal polished by WD-40 on the second polishing disc, add 5ml of polishing liquid isopropanol drop by drop, and carry out chemical polishing in the same way. . Immediately after that, rinse with isopropanol, blow dry with high-purity nitrogen, and store in a vacuum desiccator.

Embodiment 2

[0015] Embodiment 2: The rubber mat is spread on two polishing disks; The MAPbBr grown from the solution method 3 Put the crystal on the first polishing disc, spray 3 ml of WD-40 polishing liquid on the rubber pad, draw the word "8" with your finger for grinding and polishing, polish both sides of the wafer for 600 seconds, and then rinse with isopropanol immediately; Put the crystal polished by WD-40 on the second polishing disc, add 5ml of polishing liquid isopropanol drop by drop, and carry out chemical polishing in the same way. . Immediately after that, rinse with isopropanol, blow dry with high-purity nitrogen, and store in a vacuum desiccator.

Embodiment 3

[0016] Embodiment 3: the rubber mat is spread on two polishing discs; the MAPbBr grown from the solution method 3 Put the crystal on the first polishing disc, spray 3 ml of WD-40 polishing liquid on the rubber pad, draw the word "8" with your finger for grinding and polishing, polish both sides of the wafer for 300 seconds, and then rinse with isopropanol immediately; Put the crystal polished by WD-40 on the second polishing disk, add 4ml of polishing liquid isopropanol dropwise, and carry out chemical polishing in the same way. When the surface of the crystal is smooth, flat and free of scratches, the polishing is completed . Immediately after that, rinse with isopropanol, blow dry with high-purity nitrogen, and store in a vacuum desiccator.

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Abstract

The invention discloses a polishing method for an organic-inorganic hybrid halide perovskite semiconductor crystal. The polishing method is used for solving the technical problem that an existing semiconductor crystal polishing method is poor in practicability. According to the technical scheme, a rubber pad is laid on two polishing discs flatly; an MAPbBr3 crystal grown from a solution method isplaced on the first polishing disc, 1-3 milliliters of a WD-40 polishing solution is sprayed on the rubber pad, and a finger is used for drawing an 8-shaped character to carry out grinding and polishing, two surfaces of a crystal plate are separately polished for 300-1000 seconds, and then the crystal plate is immediately washed by using isopropyl alcohol; then the crystal subjected to polishing by the WD-40 polishing solution is placed on the second polishing disc, 3-5 milliliters of an isopropyl alcohol polishing solution is dropwise added, chemical polishing is carried out according to thesame method, and after the surface of the crystal is smooth, flat and free of scratches, grinding and polishing is completed; and then the crystal is immediately washed by using the isopropyl alcoholand then is blown to dry by high-purity nitrogen. According to the polishing method, due to the fact that the two polishing solutions are adopted for successively polishing, no new residue can be generated, and the practicability is good.

Description

technical field [0001] The invention relates to a semiconductor crystal polishing method, in particular to an organic-inorganic hybrid halide perovskite semiconductor crystal polishing method. Background technique [0002] Organic-inorganic hybrid halide perovskite MAPbX 3 Materials are widely used in LEDs, solar cells, photodetectors, nuclear radiation detection and other fields. A solution method is usually employed to prepare hybrid halide perovskite crystals. Due to the difference in growth conditions, the growth rate of different crystal planes is different for the crystals that are spontaneously nucleated and grown by the solution method, and the crystals obtained have a variety of regular three-dimensional shapes, which is not conducive to the preparation of planar devices. The obtained large-sized crystals also need to be properly tailored before device fabrication. The crystals obtained by the solution method often have solution residue on the surface, and the vo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B24B37/04B24B37/10B24B7/22
CPCB24B7/228B24B37/042B24B37/044B24B37/10
Inventor 徐亚东刘欣张滨滨李乐琪张洪健介万奇
Owner NANJING GONGCHENG RES INST OF ENERGY CONSERVATION & NEW MATERIALS TECH CO LTD