Polishing liquid and method for polishing ó -ó÷ compound semiconductor wafer
A polishing liquid and semiconductor technology, applied in the field of polishing liquid, can solve the problems of easily scratched wafers, etc., and achieve the possible effects of easy cleaning, reduced roughness, and reduced secondary scratches
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Examples
Embodiment 1
[0013] Example 1: Preparation of polishing solution: (1) 10 ml of deionized water was added to 0.5 g of sodium fatty alcohol polyoxyethylene ether sulfate, left overnight, and stirred evenly. (2) Dissolve 0.22 gram of sodium dodecylbenzenesulfonate in 5 milliliters of deionized water, add 0.04 gram of coconut oleic acid diethanolamide, and stir. (3) After mixing the above two solutions, add 775 ml of absolute ethanol, stir well, add 10 ml of bromine, and mix well.
[0014] Spread the rubber pad on the polishing disc, fix the finely ground II-VI group compound semiconductor wafer on the bracket of the polishing device, add 10 ml of polishing solution onto the rubber pad, set the polishing disc rotation speed to 15r / min, and The semiconductor wafer is polished for 10 seconds, rinsed with absolute ethanol immediately, and then rinsed with high-purity water, and stored in a desiccator.
[0015] Measured with a Zygo.NewView 5000 optical profiler, the roughness of the above II-VI c...
Embodiment 2
[0016] Example 2: Preparation of polishing liquid: (1) 10 ml of deionized water was added to 0.1 g of fatty alcohol polyoxyethylene ether sodium sulfate, left overnight, and stirred evenly. (2) Dissolve 0.04 gram of sodium dodecylbenzenesulfonate in 5 milliliters of deionized water, add 0.02 gram of coconut oleic acid diethanolamide, and stir. (3) After mixing the above two solutions, add 775 ml of absolute ethanol, stir well, add 12 ml of bromine, and mix well.
[0017] Spread the rubber pad on the polishing disc, fix the finely ground II-VI group compound semiconductor wafer on the support of the polishing device, add 15 ml of polishing liquid onto the rubber pad, set the polishing disc speed to 20r / min, and The semiconductor wafer is polished for 30 seconds, rinsed with absolute ethanol immediately, and then rinsed with high-purity water, and stored in a desiccator.
[0018] Measured with a Zygo.NewView 5000 optical profiler, the roughness of the above II-VI compound semic...
Embodiment 3
[0019] Example 3: Preparation of polishing liquid: (1) 10 ml of deionized water was added to 0.21 g of fatty alcohol polyoxyethylene ether sodium sulfate, left overnight, and stirred evenly. (2) Dissolve 0.08 gram of sodium dodecylbenzene sulfonate in 5 milliliters of deionized water, and add 0.06 gram of coconut oleic acid diethanolamide, and stir. (3) After mixing the above two solutions, add 775 ml of absolute ethanol, stir well, add 13 ml of bromine, and mix well.
[0020] Spread the rubber pad on the polishing disc, fix the finely ground II-VI group compound semiconductor wafer on the bracket of the polishing device, add 18 ml of polishing solution onto the rubber pad, set the polishing disc speed to 25r / min, and The semiconductor wafer is polished for 60 seconds, rinsed with absolute ethanol immediately, and then rinsed with high-purity water, and stored in a desiccator.
[0021] Measured with a Zygo.NewView 5000 optical profiler, the roughness of the above II-VI compou...
PUM
| Property | Measurement | Unit |
|---|---|---|
| particle size | aaaaa | aaaaa |
| surface roughness | aaaaa | aaaaa |
| surface roughness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More