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Polishing solution for aluminum nitride ceramic substrate as well as preparation method and polishing method thereof

A technology of aluminum nitride ceramics and polishing fluid, which is applied in the direction of grinding/polishing equipment, polishing compositions containing abrasives, manufacturing tools, etc., and can solve the problem that the surface roughness cannot be less than 20nm, and there are not many researches on polishing methods. Eliminate scratches on the surface of the wafer and achieve the effects of reducing secondary scratches, improving polishing rate, and easy cleaning

Inactive Publication Date: 2021-03-19
BEIJING GRISH HITECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Aluminum nitride ceramics are hard and brittle materials with stable chemical properties and are not prone to acid-base reactions at room temperature. At present, there are not many studies on the polishing methods of aluminum nitride ceramic substrates. The silica sol commonly used in semiconductor wafer polishing methods is used for CMP chemical mechanical The removal rate of polishing is low, and there are still scratches or unevenness on the surface of the wafer after polishing, the surface roughness cannot be less than 20nm, and the quality of the polished substrate is not good

Method used

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preparation example Construction

[0058] According to another aspect of the present invention, the present invention also relates to the preparation method of the above-mentioned aluminum nitride ceramic substrate polishing liquid, comprising the following steps:

[0059] Adjust the pH of the mixed dispersion liquid of the alumina abrasive, dispersant and water to 3-5.

[0060] The preparation method of the invention is simple and easy.

[0061] Preferably, the preparation method of the mixed dispersion comprises the following steps:

[0062] The mixture of alumina abrasive and water is subjected to ultrasonic treatment, and then the dispersant is added for ultrasonic treatment.

[0063] Preferably, a pH regulator is added under stirring to adjust the pH of the mixed dispersion to 3-5.

[0064] Preferably, the time for ultrasonically treating the mixture of alumina abrasives and water is 8-12 minutes.

[0065] In one embodiment, the time for ultrasonically treating the mixture of alumina abrasives and water...

Embodiment 1

[0076] A preparation method of a polishing liquid for an aluminum nitride ceramic substrate, comprising the following steps:

[0077] Add 100g of alumina micropowder with a particle size of 600nm and block shape to 900g of pure water, first stir ultrasonically for 10min, then add 7.5g of DISPERBYK-191, then ultrasonically stir for 20min, and finally dilute it for use under stirring Phosphoric acid aqueous solution is used to adjust the pH value of the system to 3.68.

Embodiment 2

[0079] A preparation method of a polishing liquid for an aluminum nitride ceramic substrate, comprising the following steps:

[0080] Add 100g of alumina micropowder with a particle size of 600nm and a spherical shape to 900g of pure water, first ultrasonically stir for 10min, then add 5g of DISPERBYK-2015, then ultrasonically stir for 20min, and finally use the diluted oxalic acid under stirring The aqueous solution adjusted the pH of the system to 3.72.

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Abstract

The invention relates to the technical field of grinding and polishing, in particular to a polishing solution for an aluminum nitride ceramic substrate as well as a preparation method and a polishingmethod of the polishing solution. The polishing solution for the aluminum nitride ceramic substrate is mainly prepared from the following components in parts by mass: 90-110 parts of an aluminum oxideabrasive, 4-12 parts of a dispersing agent and 850-950 parts of water, and adjusting the pH value of the polishing solution to 3-5 by adopting a pH regulator. The polishing solution can effectively polish the aluminum nitride ceramic substrate, improves the polishing rate, remarkably reduces the surface roughness, is easy to clean, and reduces secondary scratches in the polishing process of the aluminum nitride ceramic substrate.

Description

technical field [0001] The invention relates to the technical field of grinding and polishing, in particular to a polishing liquid for an aluminum nitride ceramic substrate, a preparation method and a polishing method thereof. Background technique [0002] Nitride wide-bandgap semiconductors, including gallium nitride and aluminum nitride, have important applications in the fields of blue-ultraviolet optoelectronic devices, high-frequency and high-power electronic devices, etc. However, due to the lack of effective single crystal preparation methods, devices based on nitride wide-bandgap semiconductors can only be epitaxially grown on heterogeneous substrates. Commonly used heterogeneous substrates include sapphire, silicon carbide and silicon, etc. Their lattice constants are quite different from those of nitride wide bandgap semiconductors, resulting in a large dislocation density in the heterogeneously grown epitaxial layer, which seriously affects the device performance....

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02B24B1/00B24B57/02
CPCB24B1/00B24B57/02C09G1/02
Inventor 苑亚斐成淼李雪梅
Owner BEIJING GRISH HITECH