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Polishing liquid and method for polishing II-VI compound semiconductor wafer

A polishing liquid and semiconductor technology, applied in the field of polishing liquid, can solve the problems of easily scratched wafers, achieve the effects of easy cleaning, reducing the possibility of secondary scratches, and reducing roughness

Active Publication Date: 2007-05-30
IMDETEK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the average particle size of cerium oxide, cerium halide and cerium sulfide compounds or tetravalent metal oxide particles is 1 to 300 nanometers, which is easy to scratch the wafer

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0013] Example 1: Preparation of polishing liquid: (1) Add 10 ml of deionized water to 0.5 g of fatty alcohol polyoxyethylene ether sodium sulfate, leave it overnight, and stir evenly. (2) Dissolve 0.22 g of sodium dodecylbenzene sulfonate in 5 ml of deionized water, add 0.04 g of coconut oil acid diethanolamide, and stir. (3) After mixing the above two solutions, add 775 ml of absolute ethanol, stir well, add 10 ml of bromine, and mix well.

[0014] Spread the rubber pad flat on the polishing disk, fix the finely ground II-VI compound semiconductor wafer on the support of the polishing device, drop 10 ml of polishing liquid on the rubber pad, set the polishing disk rotation speed to 15r / min, The semiconductor wafer is polished for 10 seconds, rinsed immediately with absolute ethanol, then rinsed with high-purity water, and stored in a desiccator.

[0015] Measured with a Zygo.NewView 5000 optical profiler, the roughness of the above-mentioned group II-VI compound semiconductor wa...

Embodiment 2

[0016] Example 2: Preparation of polishing liquid: (1) Add 10 ml of deionized water to 0.1 g of fatty alcohol polyoxyethylene ether sodium sulfate, leave it overnight, and stir evenly. (2) Dissolve 0.04 g of sodium dodecylbenzene sulfonate in 5 ml of deionized water, add 0.02 g of coconut oil acid diethanolamide, and stir. (3) After mixing the above two solutions, add 775 ml of absolute ethanol, stir well, add 12 ml of bromine, and mix well.

[0017] Spread the rubber pad flat on the polishing disc, fix the finely ground II-VI compound semiconductor wafer on the support of the polishing device, drop 15 ml of polishing liquid on the rubber pad, set the polishing disc speed to 20r / min, The semiconductor wafer is polished for 30 seconds, rinsed immediately with absolute ethanol, then rinsed with high-purity water, and stored in a desiccator.

[0018] Measured with a Zygo.NewView 5000 optical profiler, the roughness of the above-mentioned group II-VI compound semiconductor wafer is 26...

Embodiment 3

[0019] Example 3: Preparation of polishing liquid: (1) Add 10 ml of deionized water to 0.21 g of fatty alcohol polyoxyethylene ether sodium sulfate, leave it overnight, and stir evenly. (2) Dissolve 0.08 g of sodium dodecylbenzene sulfonate in 5 ml of deionized water, add 0.06 g of coconut oil acid diethanolamide, and stir. (3) After mixing the above two solutions, add 775 ml of absolute ethanol, stir well, add 13 ml of bromine, and mix well.

[0020] Spread the rubber pad flat on the polishing disc, fix the finely ground II-VI compound semiconductor wafer on the support of the polishing device, drop 18 ml of polishing liquid on the rubber pad, set the polishing disc rotation speed to 25r / min, The semiconductor wafer is polished for 60 seconds, rinsed immediately with absolute ethanol, then rinsed with high-purity water, and stored in a desiccator.

[0021] Measured with a Zygo.NewView 5000 optical profiler, the roughness of the above II-VI group compound semiconductor wafer is 26...

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PUM

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Abstract

The invention discloses a polishing liquid, which comprises the following parts: 0.1-0.75g / L aliphatic alcohol polyoxyethylene ether sodium sulfate, 0.04-0.4g / L sodium dodecylbenzene sulfonate, 0.02-0.15g / L coconut oleic acid acetal amide, 1-2% bromine and anhydrous alcohol. The making method of polishing liquid comprises the following steps: paving rubber pad on the polishing disc; fising grinded II-VI compound semi-conductor wafer on the rack of polishing device; dripping 10-30ml polishing liquid on the rubber pad; setting rotary speed of polishing disc at 15-50r / min for 10-120s; washing through anhydrous alcohol and high-purity water; drying; reserving. The invention makes dirt cleaned easily, which produces polished roughness between 30 and 50A.

Description

Technical field [0001] The invention relates to a polishing liquid, and also relates to a method for polishing II-VI group compound semiconductor wafers with the polishing liquid. Background technique [0002] The surface condition of semiconductor wafers seriously affects the optical and electrical properties of semiconductor devices. Polishing can remove the single crystal damage layer produced during fine grinding of the wafer. High-quality single crystal materials have strict requirements on the flatness and roughness of the surface. Therefore, high requirements are put forward for the polishing process and polishing materials of semiconductor wafers. [0003] The document "Chinese Patent with Patent Application No. 02800353.5" discloses a polishing agent and a method for polishing a substrate. The document ranges from a cerium compound with a density of 3 to 6 g / cm 3 and an average secondary particle size of 1 to 300 nanometers. Among them, cerium oxide, cerium halide and ce...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/18H01L21/304
Inventor 马淑英介万奇华慧王涛杨光昱
Owner IMDETEK