Double-faced alumina P-type PERC solar cell and making method

A technology of solar cells and manufacturing methods, applied in the field of solar cells, can solve problems such as increased production costs, and achieve the effects of improving conversion efficiency and reducing reflectivity

Active Publication Date: 2018-04-06
HENGDIAN GRP DMEGC MAGNETICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method needs to add the function of laughing gas to the conventional PECVD coating machine, and the equipment modification and the consumption of laughing gas will lead to increased production costs

Method used

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  • Double-faced alumina P-type PERC solar cell and making method
  • Double-faced alumina P-type PERC solar cell and making method
  • Double-faced alumina P-type PERC solar cell and making method

Examples

Experimental program
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Effect test

Embodiment 1

[0028] Such as figure 1 As shown, a double-sided alumina P-type PERC solar cell includes a silicon wafer 3 and two positive electrodes 7 arranged on the front side of the silicon wafer; the front side of the silicon wafer is sequentially provided with a front silicon nitride film 2 and a front surface An aluminum oxide film 1; a back aluminum oxide film 4, a back silicon nitride film 5, and a back electrode / field 6 are sequentially provided on the back of the silicon wafer.

[0029] 1) Cleaning and texturing: After cleaning the P-type silicon wafer with hydrogen peroxide, place it in an alkali with a temperature of 80°C and a concentration of 3% for texturing for 15 minutes, then wash it with hydrochloric acid and hydrofluoric acid for 2 minutes, wash it with pure water for 2 minutes, and then bake it Dry.

[0030] 2) Diffusion to make PN junction: pass the silicon wafer after step 1) into texture at 840°C under the high temperature condition of 840°C, and pass phosphorus oxy...

Embodiment 2

[0044] A double-sided aluminum oxide P-type PERC solar cell, comprising a silicon wafer 3 and two positive electrodes 7 arranged on the front side of the silicon wafer; the front side of the silicon wafer is provided with a front silicon nitride film 2 and a front aluminum oxide film in sequence 1. The back of the silicon wafer is provided with an aluminum oxide film 4 on the back, a silicon nitride film 5 on the back, and a back electrode / field 6 in sequence.

[0045] The manufacturing method of the double-sided aluminum oxide P-type PERC solar cell comprises the following steps:

[0046] 1) Cleaning and texturing: After cleaning the P-type silicon wafer with hydrogen peroxide, place it in 3% alkali at 78°C for 20 minutes, then wash it with hydrochloric acid and hydrofluoric acid for 3 minutes, wash it with pure water for 3 minutes, and then dry it .

[0047] 2) Diffusion PN junction: the silicon wafer after step 1) is textured at 720° C., and phosphorus oxychloride, nitroge...

Embodiment 3

[0055] A double-sided aluminum oxide P-type PERC solar cell, comprising a silicon wafer 3 and two positive electrodes 7 arranged on the front side of the silicon wafer; the front side of the silicon wafer is provided with a front silicon nitride film 2 and a front aluminum oxide film in sequence 1. The back of the silicon wafer is provided with an aluminum oxide film 4 on the back, a silicon nitride film 5 on the back, and a back electrode / field 6 in sequence.

[0056] The manufacturing method of the double-sided aluminum oxide P-type PERC solar cell comprises the following steps:

[0057] 1) Cleaning and texturing: After cleaning the P-type silicon wafer with hydrogen peroxide, place it in 4% alkali at 82°C for 10 minutes, then wash it with hydrochloric acid and hydrofluoric acid for 1 minute, wash it with pure water for 1 minute, and then dry it .

[0058] 2) Diffusion to make PN junction: pass the silicon wafer after step 1) textured at 850°C into phosphorus oxychloride, n...

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Abstract

The invention relates to the field of solar cells, and discloses a double-faced alumina P-type PERC solar cell and a making method. The cell comprises a silicon wafer and two positive electrodes; thefront surface of the silicon wafer is sequentially provided with a front silicon nitride film and a front alumina film; and the back surface of the silicon wafer is sequentially provided with a back alumina film, a back silicon nitride film and a back electrode/field. The making method comprises steps of 1) cleaning and etching, 2) PN junction making through diffusion, 3) etching, 4) front siliconnitride film coating, 5) double-faced alumina film coating, 6) back silicon nitride film coating, 7) laser slotting, and 8) screen printing and sintering. The back surface and the front surface of the silicon wafer are coated with the alumina films, the problems of frontal appearance color difference and blackening of an EL edge caused by coil coating when the back alumina is made in the conventional P-type PERC cell can be solved, the alumina film layer can be uniformly deposited on the front surface, the reflectivity is reduced, and the conversion efficiency is improved.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a double-sided aluminum oxide P-type PERC solar cell and a manufacturing method. Background technique [0002] The current conventional P-type PERC high-efficiency solar cell process route is mainly through: texturing-diffusion-etching / back throwing-back aluminum oxide film deposition (PECVD or ALD method)-back silicon nitride film deposition (PECVD)-front nitrogen Silicon film deposition-laser grooving-screen printing-sintering, this process route is limited to the process principle and equipment mechanism of alumina production in the process of making the aluminum oxide film on the back side, and the aluminum oxide is inevitably wound and plated on the front side of the silicon wafer The position of the edge will lead to the generation of defective films such as color difference in the front appearance and blackening of the EL edge. Various companies and research institutions in the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0216H01L31/18
CPCH01L31/02167H01L31/18Y02E10/50Y02P70/50
Inventor 孙涌涛
Owner HENGDIAN GRP DMEGC MAGNETICS CO LTD
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